RESUMO
We observe that the growth rate of Ga_{2}O_{3} in plasma-assisted molecular beam epitaxy can be drastically enhanced by an additional In supply. This enhancement is shown to result from a catalytic effect, namely, the rapid formation of In_{2}O_{3}, immediately followed by a transformation of In_{2}O_{3} to Ga_{2}O_{3} due to an In-Ga interatomic exchange. We derive a simple model that quantitatively describes this process as well as its consequences on the formation rate of Ga_{2}O_{3}. Moreover, we demonstrate that the catalytic action of In_{2}O_{3} allows the synthesis of the metastable hexagonal phase of Ga_{2}O_{3}. Since the Ga_{2}O_{3}(0001)/In_{2}O_{3}(111) interface is closely lattice matched, this novel growth mode opens a new path for the fabrication of sesquioxide heterostructures.
RESUMO
We report how the presence of electrophilic surface sites influences the adsorption mechanism of pyrrole on GaAs(001) surfaces. For this purpose, we have investigated the adsorption behavior of pyrrole on different GaAs(001) reconstructions with different stoichiometries and thus different surface chemistries. The interfaces were characterized by x-ray photoelectron spectroscopy, scanning tunneling microscopy, and by reflectance anisotropy spectroscopy in a spectral range between 1.5 and 5 eV. On the As-rich c(4 × 4) reconstruction that exhibits only nucleophilic surface sites, pyrrole was found to physisorb on the surface without any significant modification of the structural and electronic properties of the surface. On the Ga-rich GaAs(001)-(4 × 2)/(6 × 6) reconstructions which exhibit nucleophilic as well as electrophilic surface sites, pyrrole was found to form stable covalent bonds mainly to the electrophilic (charge deficient) Ga atoms of the surface. These results clearly demonstrate that the existence of electrophilic surface sites is a crucial precondition for the chemisorption of pyrrole on GaAs(001) surfaces.
RESUMO
In this work, we investigate the growth of monoclinic ß-(InxGa1-x)2O3 alloys on top of (010) ß-Ga2O3 substrates via plasma-assisted molecular beam epitaxy. In particular, using different in situ (reflection high-energy electron diffraction) and ex situ (atomic force microscopy, X-ray diffraction, time-of-flight secondary ion mass spectrometry, and transmission electron microscopy) characterization techniques, we discuss (i) the growth parameters that allow for In incorporation and (ii) the obtainable structural quality of the deposited layers as a function of the alloy composition. In particular, we give experimental evidence of the possibility of coherently growing (010) ß-(InxGa1-x)2O3 layers on ß-Ga2O3 with good structural quality for x up to ≈ 0.1. Moreover, we show that the monoclinic structure of the underlying (010) ß-Ga2O3 substrate can be preserved in the ß-(InxGa1-x)2O3 layers for wider concentrations of In (x ≤ 0.19). Nonetheless, the formation of a large amount of structural defects, like unexpected (102Ì ) oriented twin domains and partial segregation of In is suggested for x > 0.1. Strain relaxes anisotropically, maintaining an elastically strained unit cell along the a* direction vs plastic relaxation along the c* direction. This study provides important guidelines for the low-end side tunability of the energy bandgap of ß-Ga2O3-based alloys and provides an estimate of its potential in increasing the confined carrier concentration of two-dimensional electron gases in ß-(InxGa1-x)2O3/(AlyGa1-y)2O3 heterostructures.
RESUMO
Because of its unique physical properties, graphene, a 2D honeycomb arrangement of carbon atoms, has attracted tremendous attention. Silicene, the graphene equivalent for silicon, could follow this trend, opening new perspectives for applications, especially due to its compatibility with Si-based electronics. Silicene has been theoretically predicted as a buckled honeycomb arrangement of Si atoms and having an electronic dispersion resembling that of relativistic Dirac fermions. Here we provide compelling evidence, from both structural and electronic properties, for the synthesis of epitaxial silicene sheets on a silver (111) substrate, through the combination of scanning tunneling microscopy and angular-resolved photoemission spectroscopy in conjunction with calculations based on density functional theory.
RESUMO
BACKGROUND: Certificate-of-need (CON) laws in place in most US states require healthcare providers to prove to a state board that their proposed services are necessary in order to be allowed to open or expand. While CON laws most commonly target hospital and nursing home beds, many states require CONs for other types of healthcare providers and services. As of 2020, 23 states retain CON laws specifically for substance use treatment, requiring providers to prove their "economic necessity" before opening or expanding. In contrast to the extensive academic literature on how hospital and nursing home CON laws affect costs and access, substance use CON laws are essentially unstudied. METHODS: Using 2002-19 data on substance use treatment facilities from the Substance Abuse and Mental Health Services Administration's National Survey of Substance Abuse Treatment Services, we measure the effect of CON laws on access to substance use treatment. Using fixed-effects analysis of states enacting and repealing substance use CON laws, we measure how CON laws affect the number of substance use treament facilities and beds per capita in a state. RESULTS: We find that CON laws have no statistically significant effect on the number of facilities, beds, or clients and no significant effect on the acceptance of Medicare. However, they reduce the acceptance of private insurance by a statistically significant 6.0%. CONCLUSIONS: Policy makers may wish to reconsider whether substance use CON laws are promoting their goals.
Assuntos
Serviços de Saúde Mental , Transtornos Relacionados ao Uso de Substâncias , Idoso , Certificado de Necessidades , Humanos , Medicare , Transtornos Relacionados ao Uso de Substâncias/terapia , Estados UnidosRESUMO
The investigation of the vibrational properties of epitaxial silicene and two-dimensional (2D) Si structures on the silver(111) surface aims for a better understanding of the structural differences and of the simplification of the seemingly complex phase diagrams reported over the last years. The spectral signatures of the main silicene phases epitaxially grown on Ag(111) were obtained using in situ Raman spectroscopy. Due to the obvious 2D nature of various epitaxial silicene structures, their fingerprints consist of similar sets of Raman modes. The reduced phase diagram also includes other Si phases, such as amorphous and crystalline silicon, which emerge on the Ag surface at low and high preparation temperatures, respectively. The Raman signatures obtained along with their interpretations provide the referential basis for further studies and for potential applications of epitaxial silicene.
RESUMO
Silicene, the considered equivalent of graphene for silicon, has been recently synthesized on Ag(111) surfaces. Following the tremendous success of graphene, silicene might further widen the horizon of two-dimensional materials with new allotropes artificially created. Due to stronger spin-orbit coupling, lower group symmetry and different chemistry compared to graphene, silicene presents many new interesting features. Here, we focus on very important aspects of silicene layers on Ag(111): First, we present scanning tunneling microscopy (STM) and non-contact Atomic Force Microscopy (nc-AFM) observations of the major structures of single layer and bi-layer silicene in epitaxy with Ag(111). For the (3 × 3) reconstructed first silicene layer nc-AFM represents the same lateral arrangement of silicene atoms as STM and therefore provides a timely experimental confirmation of the current picture of the atomic silicene structure. Furthermore, both nc-AFM and STM give a unifying interpretation of the second layer (â3 × â3)R ± 30° structure. Finally, we give support to the conjectured possible existence of less stable, ~2% stressed, (â7 × â7)R ± 19.1° rotated silicene domains in the first layer.
Assuntos
Nanopartículas Metálicas/química , Nanopartículas Metálicas/ultraestrutura , Microscopia de Força Atômica/métodos , Microscopia de Tunelamento/métodos , Silício/química , Prata/química , Conformação Molecular , Tamanho da PartículaRESUMO
The growth of multilayer silicene is an exciting challenge for the future of silicon nano-electronics. Here, we use angle-resolved photoemission spectroscopy to map the entire Brillouin zone (BZ) of (â3 × â3)R30° reconstructed epitaxial multilayer silicene islands, growing on top of the first (3 × 3) reconstructed silicene wetting layer, on Ag(111) substrates. We found Λ- and V-shape linear dispersions, which we relate to the π and π* bands of massless quasiparticles in multilayer silicene, at the BZ centre [Formula: see text] and at all the [Formula: see text] centres of the (â3 × â3)R30° Brillouin zones in the extended scheme, due to folding of the Dirac cones at the [Formula: see text] and [Formula: see text] points of the (1 × 1) silicene BZ. The Fermi velocity of â¼0.3 × 10(6) m s(-1) obtained is highly promising for potential silicene-based devices.
RESUMO
An approach is presented that allows NMR relaxation rates to be determined for a complex mixture, and it is applied to a dimethyl sulfoxide/water solution. This approach is novel for such systems, having only been used for simple systems such as atomic liquids or atomic ions in liquids until now. It involves use of a predetermined, quantum mechanical, multidimensional property surface in a simulation. The results are used in conjunction with the simulated rotational correlation time to calculate the deuteron quadrupole coupling constant (DQCC), in an analogous approach to the one used by experimentalists, and to examine the surprising experimental findings for the composition dependence of the DQCC in the dimethyl sulfoxide/water mixture. Experiments have suggested that the DQCC for a mixture of 5% dimethyl sulfoxide in water is close to the DQCC of ice, whereas its value increases to a value close to the gas value with further dilution.(1) The results are further critically analyzed using combinations of different experimental and theoretical results from the literature.