Detalhe da pesquisa
1.
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.
Nano Lett
; 21(11): 4730-4737, 2021 Jun 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-34038143
2.
Giant Anisotropy of Spin Relaxation and Spin-Valley Mixing in a Silicon Quantum Dot.
Phys Rev Lett
; 124(25): 257701, 2020 Jun 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-32639759
3.
Amorphous oxide semiconductor for monolithic 3D DRAM: an enabler or passer-by?
Natl Sci Rev
; 11(3): nwad290, 2024 Mar.
Artigo
em Inglês
| MEDLINE | ID: mdl-38312381
4.
Low Temperature (Down to 6 K) and Quantum Transport Characteristics of Stacked Nanosheet Transistors with a High-K/Metal Gate-Last Process.
Nanomaterials (Basel)
; 14(11)2024 May 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-38869541
5.
Gate-defined quantum point contacts in a germanium quantum well.
Nanoscale
; 16(21): 10333-10339, 2024 May 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-38738596
6.
Effective electrical manipulation of a topological antiferromagnet by orbital torques.
Nat Commun
; 15(1): 745, 2024 Jan 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-38272914
7.
Highly Energy-Efficient Spin Current Generation in SrIrO3 by Manipulating the Octahedral Rotation.
ACS Appl Mater Interfaces
; 16(1): 1129-1136, 2024 Jan 10.
Artigo
em Inglês
| MEDLINE | ID: mdl-38118124
8.
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Nanomaterials (Basel)
; 14(10)2024 May 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-38786792
9.
The Impact of Ambient Temperature on Electrothermal Characteristics in Stacked Nanosheet Transistors with Multiple Lateral Stacks.
Nanomaterials (Basel)
; 13(22)2023 Nov 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-37999325
10.
Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.
Nanomaterials (Basel)
; 13(11)2023 Jun 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-37299689
11.
High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale.
Nanomaterials (Basel)
; 13(12)2023 Jun 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-37368297
12.
Insight into over Repair of Hot Carrier Degradation by GIDL Current in Si p-FinFETs Using Ultra-Fast Measurement Technique.
Nanomaterials (Basel)
; 13(7)2023 Apr 03.
Artigo
em Inglês
| MEDLINE | ID: mdl-37049352
13.
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.
Nanomaterials (Basel)
; 13(14)2023 Jul 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-37513138
14.
Undoped Strained Ge Quantum Well with Ultrahigh Mobility of Two Million.
ACS Appl Mater Interfaces
; 15(23): 28799-28805, 2023 Jun 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-37166277
15.
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
ACS Nano
; 17(22): 22259-22267, 2023 Nov 28.
Artigo
em Inglês
| MEDLINE | ID: mdl-37823534
16.
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions.
ACS Appl Mater Interfaces
; 15(48): 56567-56574, 2023 Dec 06.
Artigo
em Inglês
| MEDLINE | ID: mdl-37988059
17.
Special Issue: Silicon Nanodevices.
Nanomaterials (Basel)
; 12(12)2022 Jun 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-35745318
18.
A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device Thereof.
Nanomaterials (Basel)
; 12(21)2022 Oct 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-36364614
19.
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.
Nanomaterials (Basel)
; 12(9)2022 Apr 19.
Artigo
em Inglês
| MEDLINE | ID: mdl-35564112
20.
Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon.
Nanomaterials (Basel)
; 12(5)2022 Feb 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-35269230