Possibility of regulating valley-contrasting physics and topological properties by ferroelectricity in functionalized arsenene.

A two-dimensional (2D) multifunctional material, which couples multiple physical properties together, is both fundamentally intriguing and practically appealing. Here, based on first-principles calculations and tight-binding (TB) model analysis, the possibility of regulating the valley-contrasting physics and nontrivial topological properties via ferroelectricity is investigated in monolayer AsCH2OH. Reversible electric polarization is accessible via the rotation operation on the ligand. The broken inversion symmetry and the spin-orbit coupling (SOC) would lead to valley spin splitting, spin-valley coupling and valley-contrasting Berry curvature. More importantly, the reversal of electric polarization can realize the nonvolatile control of valley-dependent properties. Besides, the nontrivial topological state is confirmed in the monolayer AsCH2OH, which is robust against the rotation operation on the ligand. The magnitude of polarization, valley spin splitting and bulk band gap can be effectively modulated by the biaxial strain. The H-terminated SiC is demonstrated to be an appropriate candidate for encapsulating monolayer AsCH2OH, without affecting its exotic properties. These findings provide insights into the fundamental physics for the coupling of the valley-contrasting phenomenon, topological properties and ferroelectricity, and open avenues for exploiting innovative device applications.

Prediction of the ferrovalley property with sizable valley splitting in Janus monolayer GdBrI.

The exploitation of two-dimensional (2D) ferrovalley materials is of great significance in promoting the development of novel information storage devices, which is garnering increasing interest nowadays. However, the currently discovered 2D ferrovalley materials are very limited, and some of them still suffer from the drawback of small valley splitting, which seriously hinders their application in valleytronics. Herein, using first-principles calculations, we predict a promising 2D ferrovalley material, Janus monolayer GdBrI, which harbors sizable valley splitting and the anomalous valley Hall effect (AVHE). Monolayer GdBrI is a stable ferromagnetic semiconductor with an easy magnetization plane and magnetic transition temperature of 264.5 K. When the magnetization orientation is toward the z direction, valley polarization with a large splitting of 120.4 meV is achieved in the valence band due to the synergetic effect between the magnetic exchange interaction and spin-orbit coupling. The valley-contrasting Berry curvature gives rise to the AVHE in the monolayer. The magnitude of valley splitting can be continuously tuned by varying the magnetization orientation, biaxial strain and perpendicular electric field. These findings offer Janus monolayer GdBrI as a potential candidate for spintronic and valleytronic applications.

High excellent hydrogen evolution characteristics and novel mechanism of two-dimensional tetra-phase OsN2 and ReN2.

It is essential to find a kind of electrocatalyst for hydrogen evolution reduction (HER) comparable with a noble metal that has good conductivity and abundant active sites. Based on systematic searches by first-principles calculations, we discovered two-dimensional transition-metal nitrides, tetra-phase OsN2 and ReN2 monolayers, as potential HER electrocatalysts with superior thermodynamic and kinetic stability. They exhibited excellent catalytic activity due to the presence of multiple active sites with a density of 8 × 1015 site per cm2 and an overpotential close to 0. In addition, we also found that the synergistic effect of strain and coverage makes them have a good hydrogen evolution activity. The ΔGH of the OsN2 monolayer at 1% tensile strain under 3/4 hydrogen coverage is 0.02 eV, and that of ReN2 at 1/2 hydrogen coverage could decrease to 0.001 eV. Different from other common transition metal nitrides, we found that the active sites of OsN2 and ReN2 monolayers are both at nitrogen atoms, which could be further understood by the crystal orbital Hamiltonian population analysis between N and metal atoms. All these interesting findings not only provide new excellent candidates but also provide new insights into the mechanism of hydrogen evolution of nitrides.

A Predefined-Time Control for the Laser Acquisition in Space Gravitational Wave Detection Mission.

The establishment of a laser link between satellites, i.e., the acquisition phase, is a key technology for space-based gravitational detection missions, and it becomes extremely complicated when the long distance between satellites, the inherent limits of the sensor accuracy, the narrow laser beam divergence and the complex space environment are considered. In this paper, we investigate the laser acquisition problem of a new type of satellite equipped with two two-degree-of-freedom telescopes. A predefined-time controller law for the acquisition phase is proposed. Finally, a numerical simulation was conducted to demonstrate the effectiveness of the proposed controller. The results showed that the new strategy has a higher efficiency and the control performance can meet the requirements of the gravitational detection mission.

Two-dimensional Weyl semi-half-metallic NiCS3 with a band structure controllable by the direction of magnetization.

Two-dimensional (2D) Weyl semi-half-metals (WSHMs) have attracted tremendous interest for their fascinating properties combining half-metallic ferromagnetism and Weyl fermions. In this work, we present a NiCS3 monolayer as a new 2D WSHM material using systematic first-principles calculations. It has 12 fully spin-polarized Weyl nodal points in one spin channel with a Fermi velocity of 3.18 × 105 m s-1 and a fully gapped band structure in the other spin channel. It exhibits good mechanical and thermodynamic stabilities and the Curie temperature is estimated to be 403 K. The Weyl points are protected by vertical mirror plane symmetry along Γ-K, and each of them remains gapless even under spin-orbit coupling when the direction of spin is perpendicular to the Γ-K line including the Weyl point, which makes it possible to control the opening and closing of Weyl points by applying and rotating external magnetic fields. Our work not only provides a promising 2D WSHM material to explore the fundamental physics of symmetry protected ferromagnetic Weyl fermions, but also reveals a potential mechanism of band engineering of 2D WSHM materials in spintronics.

Germanene/GaGeTe heterostructure: a promising electric-field induced data storage device with high carrier mobility.

Opening up a band gap without lowering high carrier mobility in germanene and finding suitable substrate materials to form van der Waals heterostructures have recently emerged as an intriguing way of designing a new type of electronic devices. By using first-principles calculations, here, we systematically investigate the effect of the GaGeTe substrate on the electronic properties of monolayer germanene. Linear dichroism of the Dirac-cone like band dispersion and higher carrier mobility (9.7 × 103 cm2 V-1 s-1) in the Ge/GaGeTe heterostructure (HTS) are found to be preserved compared to that of free-standing germanene. Remarkably, the band structure of HTS can be flexibly modulated by applying bias voltage or strain. A prototype data storage device FET based on Ge/GaGeTe HTS is proposed, which presents a promising high performance platform with a tunable band gap and high carrier mobility.

Fingertip Reconstruction Using a Lateral Flap Based on the Distal Transverse Arch of the Digital Artery.

PURPOSE: Fingertip defect is more common in emergency hand trauma in the hospital, and most of them are accompanied by defects of the phalanx and nail bed. There are many methods in clinic for the repair of Yamano zone I fingertip injury. This article reports the repair of this type of injury using a lateral flap based on the distal transverse arch of the digital artery. METHODS: From January 2015 to May 2018, the flap was used in 32 digits of 32 patients who had a fingertip injury. There were 23 men and 9 women with a mean age of 37.6 years. The injured fingers requiring reconstruction included 6 thumb, 11 index fingers, 9 middle fingers, 4 ring fingers, and 2 little fingers. Soft tissue defect range from 1.5 cm × 1.0 cm to 2.5 cm × 2.1 cm. The time of injury to emergency surgery was 1 to 7.5 hours, with a mean time of 3.2 hours. Fingertip reconstruction was performed using a lateral flap based on the distal transverse arch of the digital artery. RESULTS: All flaps survived completely after 1 to 1.5 years of follow-up, without evidence of postoperative insufficiency of blood supply or venous congestion. Healing of all donor sites was uncomplicated. No infectious complications were observed. The range of motion of the 32 fingers was excellent; For sweating, 17 fingers were excellent, 10 were good, and 5 were fair (poor sweating was found in the grafting site of the finger). The mean static 2-point discrimination scores on the reconstructed pulp were 5.2 mm (range, 3-9 mm). According to the Cold Intolerance Severity Score, 28 patients reported no cold intolerance, 3 reported mild cold intolerance, and 1 reported moderate cold intolerance. On the basis of the visual analog scale, 30 patients had no pain, 1 reported mild pain, and 1 experienced moderate pain. Positive Tinel sign was found in only 1 reconstructed finger. CONCLUSION: It is a new surgical technique that provides good shape and sensory function to the fingers and is simple to operate.

Discovery of a ferroelastic topological insulator in a two-dimensional tetragonal lattice.

Ferroelasticity and band topology are two intriguing yet distinct quantum states of condensed matter materials. Their coexistence in a single two-dimensional (2D) lattice, however, has never been observed. Here, we found that the 2D tetragonal HfC monolayer allowed simultaneous presence of ferroelastic and topological orders. By using first-principles calculations, we found that it could allow a low switching barrier with reversible strain of 17.4%, indicating that the anisotropic properties are achievable experimentally for a 2D tetragonal lattice. More interestingly, the tuning of topological behaviors with strain led to spin-separated and gapless edge states, that is, the quantum spin Hall effect. These findings from the coupling of two quantum orders offer insights into ferroelastic control over topological edge states for achieving multifunctional properties in next-generation 2D nanodevices.

[Analysis on mechanisms and medication rules of herbal prescriptions for nonalcoholic fatty liver disease based on methods of data mining and biological information].

To explore the medication rules of herbal prescriptions for nonalcoholic fatty liver disease,and analyze the possible drug targets and interactions,in order to explore the mechanisms of the herbs. Randomized controlled trials of herbal prescriptions for treating nonalcoholic fatty liver disease were collected from CNKI,Wan Fang,VIP,Sino Med and PubMed databases. The properties,flavors and meridian tropism of herbs were analyzed by using systematic cluster analysis method with SPSS 19. 0 software. Subsequently,the association rules of herbs were analyzed by using Clementine 12. 0 software. Finally,the interactions between targets and relevant signaling pathways were analyzed by Traditional Chinese Medicine Systems Pharmacology Database(TCMSP),Search Tool for the Retrieval of Interacting Genes/Proteins(STRING) and Kyoto Encyclopedia of Genes and Genomes(KEGG). In the 88 prescriptions screened out,the commonly used herbs were Salvia miltiorrhiza,Bupleurum chinense,Alisma orientale,and Crataegus pinnatifida,and the potential signaling pathways were PPAR signaling pathway and calcium signaling pathway. The results showed that the main effects of herbal prescriptions were to improve blood flow/clear blood stasis,clear heatiness/dampness,promote digestion and strengthen spleen. And its mechanism of action may be achieved through the regulation of PPAR signaling pathway and calcium signaling pathway.

Nontrivial topology and topological phase transition in two-dimensional monolayer Tl.

Topological insulating material with dissipationless edge states is a rising star in spintronics. While most two-dimensional (2D) topological insulators belong to group-IV or -V elements in a honeycomb lattice, herein, we propose a new topological phase in the 2D hexagonal group-III crystal, h-Tl, based on a tight-binding model and density-functional theory calculation. Analysis of band dispersion reveals a Dirac nodal-ring near the Fermi level, which is attributed to px,y/pz band crossing. Upon inclusion of spin-orbit coupling (SOC), h-Tl turns into a quantum spin Hall insulator under 21% biaxial strain, confirmed by integrating spin Berry curvature in the Brillouin zone and spin-polarized edge states. A prominent feature of its electronic properties is that the effect of SOC plays two essential roles of both topological gap opening and band inversion between px,y/pz orbitals, which is the first observed phenomenon in 2D materials. This study extends the scope of 2D elemental topological insulators and presents a platform to design new 2D topotronics materials.

Quantum spin Hall insulator BiXH (XH = OH, SH) monolayers with a large bulk band gap.

A large bulk band gap is critical for the application of two-dimensional topological insulators (TIs) in spintronic devices operating at room temperature. On the basis of first-principles calculations, we predict BiXH (X = OH, SH) monolayers as TIs with an extraordinarily large bulk gap of 820 meV for BiOH and 850 meV for BiSH, and propose a tight-binding model considering spin-orbit coupling to describe the electronic properties of BiXH. These large gaps are entirely due to the strong spin-orbit interaction related to the pxy orbitals of the Bi atoms of the honeycomb lattice. The orbital filtering mechanism can be used to understand the topological properties of BiXH. The XH groups simply remove one branch of orbitals (pz of Bi) and reduce the trivial 6-band lattice into a 4-band, which is topologically non-trivial. The topological characteristics of BiXH monolayers are confirmed by nonzero topological invariant Z2 and a single pair of gapless helical edge states in the bulk gap. Owing to these features, the BiXH monolayers of the large-gap TIs are an ideal platform to realize many exotic phenomena and fabricate new quantum devices working at room temperature.

Correction: Prediction of topological property in TlPBr2 monolayer with appreciable Rashba effect.

Correction for 'Prediction of topological property in TlPBr2 monolayer with appreciable Rashba effect' by Min Yuan et al., Phys. Chem. Chem. Phys., 2018, 20, 4308-4316.

Prediction of topological property in TlPBr2 monolayer with appreciable Rashba effect.

A quantum spin Hall (QSH) insulator with high stability, large bulk band gap and tunable topological properties is crucial for both fundamental research and practical application due to the presence of dissipationless edge conducting channels. Recently, chemical functionalization has been proposed as an effective route to realize the QSH effect. Based on first-principles calculations, we predict that a two-dimensional TlP monolayer would convert into a topological insulator with the effect of bromination, accompanied by a large bulk band gap of 76.5 meV, which meets the requirement for room-temperature application. The topological nature is verified by the calculation of Z2 topological invariant and helical edge states. Meanwhile, an appreciable Rashba spin splitting of 77.2 meV can be observed. The bulk band gap can be effectively tuned with external strain and electric field, while the Rashba spin splitting shows a parabolic variation trend under an external electric field. We find that the topological property is available for the TlP film when the coverage rate is more than 0.75. BN and SiC are demonstrated as promising substrates to support the topological nature of TlPBr2 film. Our findings suggest that a TlPBr2 monolayer is an appropriate candidate for hosting the nontrivial topological state and controllable Rashba spin splitting, and shows great potential applications in spintronics.

Prediction of topological crystalline insulators and topological phase transitions in two-dimensional PbTe films.

Topological phases, especially topological crystalline insulators (TCIs), have been intensively explored and observed experimentally in three-dimensional (3D) materials. However, two-dimensional (2D) films are explored much less than 3D TCIs, and even 2D topological insulators. Based on ab initio calculations, here we investigate the electronic and topological properties of 2D PbTe(001) few-layer films. The monolayer and trilayer PbTe are both intrinsic 2D TCIs with a large band gap reaching 0.27 eV, indicating a high possibility for room-temperature observation of quantized conductance. The origin of the TCI phase can be attributed to the px,y-pz band inversion, which is determined by the competition of orbital hybridization and the quantum confinement effect. We also observe a semimetal-TCI-normal insulator transition under biaxial strains, whereas a uniaxial strain leads to Z2 nontrivial states. In particular, the TCI phase of a PbTe monolayer remains when epitaxially grown on a NaI semiconductor substrate. Our findings on the controllable quantum states with sizable band gaps present an ideal platform for realizing future topological quantum devices with ultralow dissipation.

First-principles prediction of a giant-gap quantum spin Hall insulator in Pb thin film.

The quantum spin Hall (QSH) effect is promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, QSH insulators currently suffer from requiring extremely high vacuums or low temperatures. Here, using first-principles calculations, we predict cyanogen-decorated plumbene (PbCN) to be a new QSH phase, with a large gap of 0.92 eV, that is robust and tunable under external strain. The band topology mainly stems from s-pxy band inversion related to the lattice symmetry, while the strong spin-orbit coupling (SOC) of the Pb atoms only opens a large gap. When halogen atoms are incorporated into PbCN, the resulting inversion-asymmetric PbFx(CN)1-x can host the QSH effect, accompanied by the presence of a sizable Rashba spin splitting at the top of the valence band. Furthermore, the Te(111)-terminated BaTe surface is proposed to be an ideal substrate for experimental realization of these monolayers, without destroying their nontrivial topology. These findings provide an ideal platform to enrich topological quantum phenomena and expand the potential applications in high-temperature spintronics.

Prediction of flatness-driven quantum spin Hall effect in functionalized germanene and stanene.

Searching for realistic materials able to realize room-temperature quantum spin Hall (QSH) effects is currently a growing field, especially when compatibility with the current group-IV electronics industry is required. Here we predict, through first-principles calculations, a new class of QSH phases in flattened germanene and stanene functionalized with X atoms (f-GeX2 and f-SnX2; X = H, F, Cl, Br, I) with a bulk gap as large as 0.56 eV, that can be tuned efficiently under mechanical strain. More interestingly, different from the normal band order in buckled germanane and stanane, the structural flatness leads to an inverted band order without spin-orbit coupling (SOC), whereas the SOC only opens the band gap. We also find that the characteristics of edge states, such as the Fermi velocity, are enhanced greatly by edge modification. When these films are deposited on a BN substrate, a nontrivial QSH state is preserved with a Dirac cone lying within the nontrivial band gap. These findings provide a promising platform for future realistic applications of the QSH effect at room temperature in two-dimensional group-IV films.

Controllable electronic and magnetic properties in a two-dimensional germanene heterostructure.

The control of spin without a magnetic field is one of the challenges in developing spintronic devices. Here, based on first-principles calculations, we predict a new kind of ferromagnetic half-metal (HM) with a Curie temperature of 244 K in a two-dimensional (2D) germanene van der Waals heterostructure (HTS). Its electronic band structures and magnetic properties can be tuned with respect to external strain and electric field. More interestingly, a transition from HM to bipolar-magnetic-semiconductor (BMS) to spin-gapless-semiconductor (SGS) in a HTS can be realized by adjusting the interlayer spacing. These findings provide a promising platform for 2D germanene materials, which hold great potential for application in nanoelectronic and spintronic devices.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane.

It is challenging to epitaxially grow germanene on conventional semiconductor substrates. Based on first-principles calculations, we investigate the structural and electronic properties of germanene/germanane heterostructures (HTSs). The results indicate that the Dirac cone with nearly linear band dispersion of germanene is maintained in the band gap of the substrate. Remarkably, the band gaps opened in these HTSs can be effectively modulated by the external electric field and strain, and they also feature very low effective masses and high carrier mobilities. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Use of small gap anastomosis for the repair of peripheral nerve injury by cutting and sleeve jointing the epineurium.

BACKGROUND: Although epineurium neurorrhaphy is the most reliable and conventional method for the repair of peripheral nerve injury and is accepted as the gold standard, it is still far from ideal. Many attempts have been made to develop nerve anastomosis techniques. The aim of this study was to investigate the use of small gap anastomosis performed by cutting and sleeve jointing the epineurium for nerve repair. METHODS: A 12-week study was performed using small gap anastomosis via cutting and sleeve jointing the epineurium, compared with epineurium neurorrhaphy in situ, to repair a rat sciatic nerve rupture. Three experimental groups were included: sham control (n = 8), small gap anastomosis (n = 16), and epineurium neurorrhaphy (n = 16). About 12 weeks after surgery, recovery was assessed with walking track analysis, electrophysiology, hematoxylin and eosin staining, immunohistochemistry, and electron microscopy. RESULTS: The sciatic nerve functional index observed in the small gap anastomosis group was significantly higher than that in the epineurium neurorrhaphy group (p < 0.05). In vivo electrophysiological analysis confirmed that the small gap anastomosis group showed a significantly higher conduction velocity than the epineurium neurorrhaphy group (p < 0.05). Postoperative morphometric analysis revealed better results after small gap anastomosis compared with epineurium neurorrhaphy. CONCLUSION: Small gap anastomosis via cutting and sleeve jointing the epineurium could be an alternative to epineurium neurorrhaphy for the repair of peripheral nerve injury, particularly, considering that the epineurium originates from native tissue that provides a suitable microenvironment for the selective regeneration of axons.

Tunable electronic properties induced by a defect-substrate in graphene/BC3 heterobilayers.

We perform first-principles calculations to study the geometric, energetics and electronic properties of graphene supported on BC3 monolayer. The results show that overall graphene interacts weakly with BC3 monolayer via van der Waals interaction. The energy gap of graphene can be up to ∼0.162 eV in graphene/BC3 heterobilayers (G/BC3 HBLs), which is large enough for the gap opening at room temperature. We also find that the interlayer spacing and in-plane strain can tune the band gap of G/BC3 HBLs effectively. Interestingly, the characteristics of a Dirac cone with a nearly linear band dispersion relationship of graphene can be preserved, accompanied by a small electron effective mass, and thus the higher carrier mobility is still expected. These findings provide a possible way to design effective FETs out of graphene on a BC3 substrate.