Detalhe da pesquisa
1.
Space charge governs the kinetics of metal exsolution.
Nat Mater
; 23(3): 406-413, 2024 Mar.
Artigo
em Inglês
| MEDLINE | ID: mdl-38168807
2.
Tuning electrochemically driven surface transformation in atomically flat LaNiO3 thin films for enhanced water electrolysis.
Nat Mater
; 20(5): 674-682, 2021 May.
Artigo
em Inglês
| MEDLINE | ID: mdl-33432142
3.
Defect chemistry of donor-doped BaTiO3 with BaO-excess for reduction resistant PTCR thermistor applications - redox-behaviour.
Phys Chem Chem Phys
; 22(15): 8219-8232, 2020 Apr 21.
Artigo
em Inglês
| MEDLINE | ID: mdl-32249854
4.
In-Gap States and Band-Like Transport in Memristive Devices.
Nano Lett
; 19(1): 54-60, 2019 01 09.
Artigo
em Inglês
| MEDLINE | ID: mdl-30241437
5.
Introduction to new memory paradigms: memristive phenomena and neuromorphic applications.
Faraday Discuss
; 213(0): 11-27, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30740612
6.
On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides.
Faraday Discuss
; 213(0): 183-196, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30362486
7.
Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices.
Faraday Discuss
; 213(0): 215-230, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30364919
8.
Addressing Multiple Resistive States of Polyoxovanadates: Conductivity as a Function of Individual Molecular Redox States.
J Am Chem Soc
; 140(48): 16635-16640, 2018 Dec 05.
Artigo
em Inglês
| MEDLINE | ID: mdl-30418764
9.
Improvement of SET variability in TaO x based resistive RAM devices.
Nanotechnology
; 28(46): 465203, 2017 11 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-29059050
10.
Resistive Switching of Individual, Chemically Synthesized TiO2 Nanoparticles.
Small
; 11(48): 6444-56, 2015 Dec 22.
Artigo
em Inglês
| MEDLINE | ID: mdl-26540646
11.
Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches.
Nanotechnology
; 26(41): 415202, 2015 Oct 16.
Artigo
em Inglês
| MEDLINE | ID: mdl-26403696
12.
Phase-change memories (PCM) - Experiments and modelling: general discussion.
Faraday Discuss
; 213(0): 393-420, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30697618
13.
Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion.
Faraday Discuss
; 213(0): 115-150, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30663725
14.
Valence change ReRAMs (VCM) - Experiments and modelling: general discussion.
Faraday Discuss
; 213(0): 259-286, 2019 02 18.
Artigo
em Inglês
| MEDLINE | ID: mdl-30664143
15.
Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches.
Nanotechnology
; 25(42): 425202, 2014 Oct 24.
Artigo
em Inglês
| MEDLINE | ID: mdl-25266966
16.
Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.
Phys Chem Chem Phys
; 16(34): 18217-25, 2014 Sep 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-25055181
17.
Reliability effects of lateral filament confinement by nano-scaling the oxide in memristive devices.
Nanoscale Horiz
; 9(5): 764-774, 2024 Apr 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-38511616
18.
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces.
Nat Mater
; 11(6): 530-5, 2012 Apr 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-22543299
19.
Surface deformations as a necessary requirement for resistance switching at the surface of SrTiO3:N.
Nanotechnology
; 24(47): 475701, 2013 Nov 29.
Artigo
em Inglês
| MEDLINE | ID: mdl-24176802
20.
Switching kinetics of electrochemical metallization memory cells.
Phys Chem Chem Phys
; 15(18): 6945-52, 2013 May 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-23549450