Nonlinear optics in the fractional quantum Hall regime.

Engineering strong interactions between optical photons is a challenge for quantum science. Polaritonics, which is based on the strong coupling of photons to atomic or electronic excitations in an optical resonator, has emerged as a promising approach to address this challenge, paving the way for applications such as photonic gates for quantum information processing1 and photonic quantum materials for the investigation of strongly correlated driven-dissipative systems2,3. Recent experiments have demonstrated the onset of quantum correlations in exciton-polariton systems4,5, showing that strong polariton blockade6-the prevention of resonant injection of additional polaritons in a well delimited region by the presence of a single polariton-could be achieved if interactions were an order of magnitude stronger. Here we report time-resolved four-wave-mixing experiments on a two-dimensional electron system embedded in an optical cavity7, demonstrating that polariton-polariton interactions are strongly enhanced when the electrons are initially in the fractional quantum Hall regime. Our experiments indicate that, in addition to strong correlations in the electronic ground state, exciton-electron interactions leading to the formation of polaron-polaritons8-11 have a key role in enhancing the nonlinear optical response of the system. Our findings could facilitate the realization of strongly interacting photonic systems, and suggest that nonlinear optical measurements could provide information about fractional quantum Hall states that is not accessible through their linear optical response.

Demonstration of the Nonlocal Josephson Effect in Andreev Molecules.

We perform switching current measurements of planar Josephson junctions (JJs) coupled by a common superconducting electrode with independent control over the two superconducting phase differences. We observe an anomalous phase shift in the current-phase relation of a JJ as a function of gate voltage or phase difference in the second JJ. This demonstrates the nonlocal Josephson effect, and the implementation of a φ0-junction which is tunable both electrostatically and magnetically. The anomalous phase shift is larger for shorter distances between the JJs and vanishes for distances much longer than the superconducting coherence length. Results are consistent with the hybridization of Andreev bound states, leading to the formation of an Andreev molecule. Our devices constitute a realization of a tunable superconducting phase source and could enable new coupling schemes for hybrid quantum devices.

Spin-Selective Equilibration among Integer Quantum Hall Edge Channels.

The equilibration between quantum Hall edge modes is known to depend on the disorder potential and the steepness of the edge. Modern samples with higher mobilities and setups with lower electron temperatures call for a further exploration of the topic. We develop a framework to systematically measure and analyze the equilibration of many (up to 8) integer edge modes. Our results show that spin-selective coupling dominates even for non-neighboring channels with parallel spin. Changes in magnetic field and bulk density let us control the equilibration until it is almost completely suppressed and dominated only by individual microscopic scatterers. This method could serve as a guideline to investigate and design improved devices, and to study fractional and other exotic states.

Polariton Electric-Field Sensor.

We experimentally demonstrate a dipolar polariton based electric-field sensor. We tune and optimize the sensitivity of the sensor by varying the dipole moment of polaritons. We show polariton interactions play an important role in determining the conditions for optimal electric-field sensing, and achieve a sensitivity of 0.12 V m^{-1} Hz^{-0.5}. Finally, we apply the sensor to illustrate that excitation of polaritons modifies the electric field in a spatial region much larger than the optical excitation spot.

Microscopic origin of the '0.7-anomaly' in quantum point contacts.

Quantum point contacts are narrow, one-dimensional constrictions usually patterned in a two-dimensional electron system, for example by applying voltages to local gates. The linear conductance of a point contact, when measured as function of its channel width, is quantized in units of GQ = 2e(2)/h, where e is the electron charge and h is Planck's constant. However, the conductance also has an unexpected shoulder at ∼0.7GQ, known as the '0.7-anomaly', whose origin is still subject to debate. Proposed theoretical explanations have invoked spontaneous spin polarization, ferromagnetic spin coupling, the formation of a quasi-bound state leading to the Kondo effect, Wigner crystallization and various treatments of inelastic scattering. However, explicit calculations that fully reproduce the various experimental observations in the regime of the 0.7-anomaly, including the zero-bias peak that typically accompanies it, are still lacking. Here we offer a detailed microscopic explanation for both the 0.7-anomaly and the zero-bias peak: their common origin is a smeared van Hove singularity in the local density of states at the bottom of the lowest one-dimensional subband of the point contact, which causes an anomalous enhancement in the Hartree potential barrier, the magnetic spin susceptibility and the inelastic scattering rate. We find good qualitative agreement between theoretical calculations and experimental results on the dependence of the conductance on gate voltage, magnetic field, temperature, source-drain voltage (including the zero-bias peak) and interaction strength. We also clarify how the low-energy scale governing the 0.7-anomaly depends on gate voltage and interactions. For low energies, we predict and observe Fermi-liquid behaviour similar to that associated with the Kondo effect in quantum dots. At high energies, however, the similarities between the 0.7-anomaly and the Kondo effect end.

Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures.

Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions present a significant challenge in quantum device development. We report synchrotron X-ray nanodiffraction measurements combined with dynamical X-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04° and strain on the order of 10-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.

Enhanced Interactions between Dipolar Polaritons.

Nonperturbative coupling between cavity photons and excitons leads to the formation of hybrid light-matter excitations, termed polaritons. In structures where photon absorption leads to the creation of excitons with aligned permanent dipoles, the elementary excitations, termed dipolar polaritons, are expected to exhibit enhanced interactions. Here, we report a substantial increase in interaction strength between dipolar polaritons as the size of the dipole is increased by tuning the applied gate voltage. To this end, we use coupled quantum well structures embedded inside a microcavity where coherent electron tunneling between the wells creates the excitonic dipole. Modifications of the interaction strength are characterized by measuring the changes in the reflected light intensity when polaritons are driven with a resonant laser. The factor of 6.5 increase in the interaction-strength-to-linewidth ratio that we obtain indicates that dipolar polaritons could constitute an important step towards a demonstration of the polariton blockade effect, and thereby to form the building blocks of many-body states of light.

Polaron Polaritons in the Integer and Fractional Quantum Hall Regimes.

Elementary quasiparticles in a two-dimensional electron system can be described as exciton polarons since electron-exciton interactions ensures dressing of excitons by Fermi-sea electron-hole pair excitations. A relevant open question is the modification of this description when the electrons occupy flat bands and electron-electron interactions become prominent. Here, we perform cavity spectroscopy of a two-dimensional electron system in the strong coupling regime, where polariton resonances carry signatures of strongly correlated quantum Hall phases. By measuring the evolution of the polariton splitting under an external magnetic field, we demonstrate the modification of polaron dressing that we associate with filling factor dependent electron-exciton interactions.

Cavity-Mediated Coherent Coupling between Distant Quantum Dots.

Scalable architectures for quantum information technologies require one to selectively couple long-distance qubits while suppressing environmental noise and cross talk. In semiconductor materials, the coherent coupling of a single spin on a quantum dot to a cavity hosting fermionic modes offers a new solution to this technological challenge. Here, we demonstrate coherent coupling between two spatially separated quantum dots using an electronic cavity design that takes advantage of whispering-gallery modes in a two-dimensional electron gas. The cavity-mediated, long-distance coupling effectively minimizes undesirable direct cross talk between the dots and defines a scalable architecture for all-electronic semiconductor-based quantum information processing.

Lateral p-n Junction in an Inverted InAs/GaSb Double Quantum Well.

We present transport measurements on a lateral p-n junction in an inverted InAs/GaSb double quantum well at zero and nonzero perpendicular magnetic fields. At a zero magnetic field, the junction exhibits diodelike behavior in accordance with the presence of a hybridization gap. With an increasing magnetic field, we explore the quantum Hall regime where spin-polarized edge states with the same chirality are either reflected or transmitted at the junction, whereas those of opposite chirality undergo a mixing process, leading to full equilibration along the width of the junction independent of spin. These results lay the foundations for using p-n junctions in InAs/GaSb double quantum wells to probe the transition between the topological quantum spin Hall and quantum Hall states.

Nonlocal Polarization Feedback in a Fractional Quantum Hall Ferromagnet.

In a quantum Hall ferromagnet, the spin polarization of the two-dimensional electron system can be dynamically transferred to nuclear spins in its vicinity through the hyperfine interaction. The resulting nuclear field typically acts back locally, modifying the local electronic Zeeman energy. Here we report a nonlocal effect arising from the interplay between nuclear polarization and the spatial structure of electronic domains in a ν=2/3 fractional quantum Hall state. In our experiments, we use a quantum point contact to locally control and probe the domain structure of different spin configurations emerging at the spin phase transition. Feedback between nuclear and electronic degrees of freedom gives rise to memristive behavior, where electronic transport through the quantum point contact depends on the history of current flow. We propose a model for this effect which suggests a novel route to studying edge states in fractional quantum Hall systems and may account for so-far unexplained oscillatory electronic-transport features observed in previous studies.

Generation and Detection of Spin Currents in Semiconductor Nanostructures with Strong Spin-Orbit Interaction.

Storing, transmitting, and manipulating information using the electron spin resides at the heart of spintronics. Fundamental for future spintronics applications is the ability to control spin currents in solid state systems. Among the different platforms proposed so far, semiconductors with strong spin-orbit interaction are especially attractive as they promise fast and scalable spin control with all-electrical protocols. Here we demonstrate both the generation and measurement of pure spin currents in semiconductor nanostructures. Generation is purely electrical and mediated by the spin dynamics in materials with a strong spin-orbit field. Measurement is accomplished using a spin-to-charge conversion technique, based on the magnetic field symmetry of easily measurable electrical quantities. Calibrating the spin-to-charge conversion via the conductance of a quantum point contact, we quantitatively measure the mesoscopic spin Hall effect in a multiterminal GaAs dot. We report spin currents of 174 pA, corresponding to a spin Hall angle of 34%.

Insulating state and giant nonlocal response in an InAs/GaSb quantum well in the quantum Hall regime.

We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced nonlocal resistance signal of almost similar magnitude. The coexistence of these two effects is reconciled in a model of counterpropagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.

Characterization of spin-orbit interactions of GaAs heavy holes using a quantum point contact.

We present transport experiments performed in high-quality quantum point contacts embedded in a GaAs two-dimensional hole gas. The strong spin-orbit interaction results in peculiar transport phenomena, including the previously observed anisotropic Zeeman splitting and level-dependent effective g factors. Here we find additional effects, namely, the crossing and the anticrossing of spin-split levels depending on subband index and magnetic field direction. Our experimental observations are reconciled in a heavy-hole effective spin-orbit Hamiltonian where cubic- and quadratic-in-momentum terms appear. The spin-orbit components, being of great importance for quantum computing applications, are characterized in terms of magnitude and spin structure. In light of our results, we explain the level-dependent effective g factor in an in-plane field. Through a tilted magnetic field analysis, we show that the quantum point contact out-of-plane g factor saturates around the predicted 7.2 bulk value.

Quantum transport in InSb quantum well devices: progress and perspective.

InSb, a narrow-band III-V semiconductor, is known for its small bandgap, small electron effective mass, high electron mobility, large effectiveg-factor, and strong spin-orbit interactions. These unique properties make InSb interesting for both industrial applications and quantum information processing. In this paper, we provide a review of recent progress in quantum transport research on InSb quantum well devices. With advancements in the growth of high-quality heterostructures and micro/nano fabrication, quantum transport experiments have been conducted on low-dimensional systems based on InSb quantum wells. Furthermore, ambipolar operations have been achieved in undoped InSb quantum wells, allowing for a systematic study of the band structure and quantum properties of p-type narrow-band semiconductors. Additionally, we introduce the latest research on InAsSb quantum wells as a continuation of exploring physics in semiconductors with even narrower bandgaps.

Flux-Tunable Josephson Diode Effect in a Hybrid Four-Terminal Josephson Junction.

We investigate the direction-dependent switching current in a flux-tunable four-terminal Josephson junction defined in an InAs/Al two-dimensional heterostructure. The device exhibits the Josephson diode effect with switching currents that depend on the sign of the bias current. The superconducting diode efficiency, reaching a maximum of |η| ≈ 34%, is widely tunable─both in amplitude and sign─as a function of magnetic fluxes and gate voltages. Our observations are supported by a circuit model of three parallel Josephson junctions with nonsinusoidal current-phase relation. With respect to conventional Josephson interferometers, phase-tunable multiterminal Josephson junctions enable large diode efficiencies in structurally symmetric devices, where local magnetic fluxes generated on the chip break both time-reversal and spatial symmetries. Our work presents an approach for developing Josephson diodes with wide-range tunability that do not rely on exotic materials.

Large nuclear spin polarization in gate-defined quantum dots using a single-domain nanomagnet.

The electron-nuclei (hyperfine) interaction is central to spin qubits in solid state systems. It can be a severe decoherence source but also allows dynamic access to the nuclear spin states. We study a double quantum dot exposed to an on-chip single-domain nanomagnet and show that its inhomogeneous magnetic field crucially modifies the complex nuclear spin dynamics such that the Overhauser field tends to compensate external magnetic fields. This turns out to be beneficial for polarizing the nuclear spin ensemble. We reach a nuclear spin polarization of ≃50%, unrivaled in lateral dots, and explain our manipulation technique using a comprehensive rate equation model.

Tunable photoemission from an excitonic antitrap.

We study the influence of lithographically defined, electrostatic trap configurations on the photon emission from dipolar excitons in coupled quantum wells. The emission is surprisingly enhanced for an excitonic antitrap compared to a trap configuration, an effect more pronounced for a trap with smaller diameter. We explain the observations by the interplay between the exciton formation process, the lateral charge-carrier dynamics, and the dipole-dipole interactions between the excitons. Exploiting this interplay allows us to efficiently tune the excitonic emission energy with very small intensity variation.

Zeeman- and Orbital-Driven Phase Shifts in Planar Josephson Junctions.

We perform supercurrent and tunneling spectroscopy measurements on gate-tunable InAs/Al Josephson junctions (JJs) in an in-plane magnetic field and report on phase shifts in the current-phase relation measured with respect to an absolute phase reference. The impact of orbital effects is investigated by studying multiple devices with different superconducting lead sizes. At low fields, we observe gate-dependent phase shifts of up to φ0 = 0.5π, which are consistent with a Zeeman field coupling to highly transmissive Andreev bound states via Rashba spin-orbit interaction. A distinct phase shift emerges at larger fields, concomitant with a switching current minimum and the closing and reopening of the superconducting gap. These signatures of an induced phase transition, which might resemble a topological transition, scale with the superconducting lead size, demonstrating the crucial role of orbital effects. Our results elucidate the interplay of Zeeman, spin-orbit, and orbital effects in InAs/Al JJs, giving improved understanding of phase transitions in hybrid JJs and their applications in quantum computing and superconducting electronics.

Microwave-induced conductance replicas in hybrid Josephson junctions without Floquet-Andreev states.

Light-matter coupling allows control and engineering of complex quantum states. Here we investigate a hybrid superconducting-semiconducting Josephson junction subject to microwave irradiation by means of tunnelling spectroscopy of the Andreev bound state spectrum and measurements of the current-phase relation. For increasing microwave power, discrete levels in the tunnelling conductance develop into a series of equally spaced replicas, while the current-phase relation changes amplitude and skewness, and develops dips. Quantitative analysis of our results indicates that conductance replicas originate from photon assisted tunnelling of quasiparticles into Andreev bound states through the tunnelling barrier. Despite strong qualitative similarities with proposed signatures of Floquet-Andreev states, our study rules out this scenario. The distortion of the current-phase relation is explained by the interaction of Andreev bound states with microwave photons, including a non-equilibrium Andreev bound state occupation. The techniques outlined here establish a baseline to study light-matter coupling in hybrid nanostructures and distinguish photon assisted tunnelling from Floquet-Andreev states in mesoscopic devices.