Detalhe da pesquisa
1.
Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.
Small
; 20(7): e2306132, 2024 Feb.
Artigo
em Inglês
| MEDLINE | ID: mdl-37800612
2.
Phosphor-free micro-pyramid InGaN-based white light-emitting diode with a high color rendering index on a ß-Ga2O3 substrate.
Opt Lett
; 49(2): 254-257, 2024 Jan 15.
Artigo
em Inglês
| MEDLINE | ID: mdl-38194541
3.
Plasmon-enhanced deep ultraviolet Micro-LED arrays for solar-blind communications.
Opt Lett
; 48(15): 3841-3844, 2023 Aug 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-37527063
4.
Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer.
Nano Lett
; 22(8): 3364-3371, 2022 Apr 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-35404058
5.
Atomic-Scale Mechanism of Spontaneous Polarity Inversion in AlN on Nonpolar Sapphire Substrate Grown by MOCVD.
Small
; 18(16): e2200057, 2022 Apr.
Artigo
em Inglês
| MEDLINE | ID: mdl-35142049
6.
Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.
Small
; 18(41): e2202529, 2022 Oct.
Artigo
em Inglês
| MEDLINE | ID: mdl-35986697
7.
GaN-based parallel micro-light-emitting diode arrays with dual-wavelength InxGa1-xN/GaN MQWs for visible light communication.
Opt Express
; 30(11): 18461-18470, 2022 May 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-36221646
8.
Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on ß-Ga2O3.
Opt Lett
; 47(13): 3299-3302, 2022 Jul 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-35776610
9.
Strain modulated luminescence in green InGaN/GaN multiple quantum wells with microwire array by piezo-phototronic effect.
Opt Lett
; 47(23): 6157-6160, 2022 Dec 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-37219196
10.
Graphene-Nanorod Enhanced Quasi-Van Der Waals Epitaxy for High Indium Composition Nitride Films.
Small
; 17(19): e2100098, 2021 May.
Artigo
em Inglês
| MEDLINE | ID: mdl-33788402
11.
High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized ß-Ga2O3 layer.
Opt Lett
; 44(9): 2197-2200, 2019 May 01.
Artigo
em Inglês
| MEDLINE | ID: mdl-31042182
12.
Horizontal GaN nanowires grown on Si (111) substrate: the effect of catalyst migration and coalescence.
Nanotechnology
; 30(4): 045604, 2019 Jan 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-30485254
13.
Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.
J Am Chem Soc
; 140(38): 11935-11941, 2018 09 26.
Artigo
em Inglês
| MEDLINE | ID: mdl-30175921
14.
Aluminum nitride-on-sapphire platform for integrated high-Q microresonators.
Opt Express
; 25(2): 587-594, 2017 Jan 23.
Artigo
em Inglês
| MEDLINE | ID: mdl-28157948
15.
Selective-area growth of periodic nanopyramid light-emitting diode arrays on GaN/sapphire templates patterned by multiple-exposure colloidal lithography.
Nanotechnology
; 28(11): 114003, 2017 Mar 17.
Artigo
em Inglês
| MEDLINE | ID: mdl-28103586
16.
Multiple-exposure colloidal lithography for enhancing light output of GaN-based light-emitting diodes by patterning Ni/Au electrodes.
Opt Express
; 24(2): A44-51, 2016 Jan 25.
Artigo
em Inglês
| MEDLINE | ID: mdl-26832596
17.
Layer-by-Layer Approach to (2+1)D Photonic Crystal Superlattice with Enhanced Crystalline Integrity.
Small
; 11(37): 4910-21, 2015 Oct 07.
Artigo
em Inglês
| MEDLINE | ID: mdl-26179658
18.
Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes.
Opt Express
; 23(15): A957-65, 2015 Jul 27.
Artigo
em Inglês
| MEDLINE | ID: mdl-26367696
19.
Enhancement of light output power from LEDs based on monolayer colloidal crystal.
Small
; 10(9): 1668-86, 2014 May 14.
Artigo
em Inglês
| MEDLINE | ID: mdl-24532411
20.
Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals.
Opt Express
; 22 Suppl 4: A1093-100, 2014 Jun 30.
Artigo
em Inglês
| MEDLINE | ID: mdl-24978072