Ablation characteristics and material removal mechanisms of a single-crystal diamond processed by nanosecond or picosecond lasers.

The microstructures on a diamond surface have attracted extensive attention in microelectronics, ultra-precision machining tools, and optical elements, etc. In this work, microgrooves were fabricated on a single-crystal diamond surface using ultraviolet nanosecond or infrared picosecond laser pulses. The surface and internal morphologies of the microgrooves were characterized. The chemical composition and phase transition of the diamond after laser irradiation were analyzed. Furthermore, the ablation threshold, ablation rate, and material removal rate of the diamond processed by nanosecond or picosecond lasers were also calculated. In addition, the temperature distributions of the diamond ablated by nanosecond or picosecond lasers were simulated. Finally, the material removal mechanisms of a single-crystal diamond processed by nanosecond or picosecond lasers were revealed. This work is expected helpful to provide a guidance for the laser fabrication of microstructures on diamond.

Plasmonic polarization nano-splitter based on asymmetric optical slot antenna pairs.

We propose and experimentally demonstrate a plasmonic polarization nano-splitter composed of asymmetric optical slot antenna pairs. Broadband polarization-controlled unidirectional surface plasmon polariton (SPP) launching and splitting are achieved experimentally using an asymmetric optical slot antenna pair array. Both transverse-electric and transverse-magnetic-polarized incident light is coupled to SPPs on the metal surface, but with opposite directions. The measured extinction ratio for the two opposite propagating directions is larger than 5 dB within a bandwidth of 160 nm and reaches up to ∼12 dB at an incident wavelength of 790 nm. This plasmonic polarization nano-splitter, together with the polarization-controlled unidirectional SPP coupler, may have promising applications in the nano-optics and integrated optical circuits.

Coupling between surface plasmon polaritons and transverse electric polarized light via L-shaped nano-apertures.

Given that plasmonic fields are intrinsically transverse magnetic (TM), coupling surface plasmon polaritons (SPPs) and transverse electric (TE) polarized light, especially at nanoscale, remain challenging. We propose the use of L-shaped nano-apertures to overcome this fundamental limitation and enable coupling between SPPs and TE polarized light. Polarization conversion originates from the interference of two resonant modes excited in the nano-apertures and the nearly 180° phase retardation between them. The experiments show that both TE-to-plasmon and plasmon-to-TE couplings can be implemented at the subwavelength scale. This discovery provides great freedom when manipulating light based on SPPs at the nanoscale and helps in using the energy of TE polarized light.

Dependence of Monocrystalline Sapphire Dicing on Crystal Orientation Using Picosecond Laser Bessel Beams.

Dicing is a critical step in the manufacturing process for the application of sapphire. In this work, the dependence of sapphire dicing on crystal orientation using picosecond Bessel laser beam drilling combined with mechanical cleavage was studied. By using the above method, linear cleaving with on debris and zero tapers was realized for the A1, A2, C1, C2, and M1 orientations, except for the M2 orientation. The experimental results indicated that characteristics of Bessel beam-drilled microholes, fracture loads, and fracture sections of sapphire sheets were strongly dependent on crystal orientation. No cracks were generated around the micro holes when laser scanned along the A2 and M2 orientations, and the corresponding average fracture loads were large, 12.18 N and 13.57 N, respectively. While along the A1, C1, C2, and M1 orientations, laser-induced cracks extended along the laser scanning direction, resulting in a significant reduction in fracture load. Furthermore, the fracture surfaces were relatively uniform for A1, C1, and C2 orientations but uneven for A2 and M1 orientations, with a surface roughness of about 1120 nm. In addition, curvilinear dicing without debris or taper was achieved to demonstrate the feasibility of Bessel beams.

Broad-Band-Enhanced Plasmonic Perovskite Solar Cells with Irregular Silver Nanomaterials.

The localized surface plasmon resonance (LSPR) from noble metal nanomaterials (NMs) is a promising solution to approach the theoretical efficiency for photovoltaic devices. However, the plasmon resonance of metal NMs with particular shapes and sizes can only be excited within narrow spectral ranges, which can hardly cover the broad-band solar spectrum. To address this issue, in this article, Ag NMs with irregular shapes and sizes are synthesized and embedded in the electron transport layer of perovskite solar cells. With the outstanding conductivity of Ag NMs, the series resistance and charge transfer resistance of the devices are dramatically decreased. The Ag NMs with larger size could enhance the light-trapping of the devices owing to the far-field light scattering effect. The near-field enhancement by LSPR of Ag NMs with a small size mainly contributes to the promotion of carrier transport and extraction. As a result, broad-band improvements in photovoltaic performance are achieved due to the significant enhancement of light absorption and electrical features. The highest power conversion efficiency of the perovskite solar cells increases from 19.52 to 22.42% after the incorporation of Ag NMs.

Enhanced Microsphere-Assisted Picosecond Laser Processing for Nanohole Fabrication on Silicon via Thin Gold Coating.

The nanohole arrays on the silicon substrate can effectively enhance the light absorption in thin film silicon solar cells. In order to optimize the solar energy absorption, polystyrene microspheres with diameters of 1 µm are used to assist picosecond laser with a wavelength of 1064 nm to fabricate nanohole arrays on silicon substrate. The experimental results show that the morphology and size of the silicon nanoholes strongly depend on the laser fluence. At 1.19-1.59 J/cm2 laser fluences, well-ordered arrays of nanoholes were fabricated on silicon substrate, with diameters domain from 250 to 549 nm and depths ranging from 60 to 99 nm. However, large amounts of sputtered nanoparticles appeared around the silicon nanoholes. To improve the surface morphology of silicon nanoholes, a nanolayered gold coating is applied on silicon surface to assist laser processing. The results show that, for gold-coated silicon substrate, sputtered nanoparticles around the nanoholes are almost invisible and the cross-sectional profiles of the nanoholes are smoother. Moreover, the ablation rate of the nanoholes on the gold-coated silicon substrate have increased compared to that of the nanoholes on the uncoated one. This simple method allows fast fabrication of well-ordered nanoholes on silicon substrate without sputtered nanoparticles and with smooth inner surface.

Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations.

Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.

Laser-Induced-Plasma-Assisted Ablation and Metallization on C-Plane Single Crystal Sapphire (c-Al2O3).

Laser-induced-plasma-assisted ablation (LIPAA) is a promising micro-machining method that can fabricate microstructure on hard and transparent double-polished single crystal sapphire (SCS). While ablating, a nanosecond pulse 1064 nm wavelength laser beam travels through the SCS substrate and bombards the copper target lined up behind the substrate, which excites the ablating plasma. When laser fluence rises and is above the machining threshold of copper but below that of SCS, the kinetic energy of the copper plasma generated from the bombardment is mainly determined by the laser fluence, the repetition rate, and the substrate-to-target distance. With a lower repetition rate, SCS becomes metallized and gains conductivity. When micro-machining SCS with a pulsed laser are controlled by properly controlling laser machining parameters, such as laser fluence, repetition rate, and substrate-to-target distance, LIPAA can ablate certain line widths and depths of the microstructure as well as the resistance of SCS. On the contrary, conductivity resistance of metalized sapphire depends on laser parameters and distance in addition to lower repetition rate.