Hydrogen Confined in a Single Wall Carbon Nanotube Becomes a Metallic and Superconductive Nanowire under High Pressure.

Metallic hydrogen is a long-desired material. However, the pressure needed to metallize hydrogen is difficult to access experimentally. We demonstrated that the high-density of hydrogen confined in a (8,0) single-wall carbon nanotube (SWNT) can be metallized at a relative low pressure of 163.5 GPa, due to the " physical compression" effect of SWNT. Through mimicking experimental measurements of the specific heat of confined hydrogen nanowire, we showed that the electronic specific heat of the hydrogen has a clear jump around 225 K, verifying a superconducting transition at this critical temperature. The superconducting hydrogen can be very well explained by the Eliashberg superconductivity theory for an electron-phonon strong-coupling system. Our simulation results open an avenue for the study of nanohydrogen materials at high pressure.

Hydrogen saturation stabilizes vacancy-induced ferromagnetic ordering in graphene.

Density functional theory calculations are performed to explore vacancy-induced magnetism in graphene. The hydrogen saturation not only stabilizes the vacancy structure but also induces distinct magnetic coupling depending on the defect distribution: weak magnetic coupling between defects on different sublattices and strong coupling between defects on the same sublattice. Ferromagnetic ordering has to be accompanied with a semiconducting property. The interaction integral J between defective spins decreases linearly with the increase of the distance between them. Based on the 2D Ising model and Monte Carlo simulations, the possible highest Curie temperature T(c) of defective graphene is predicted to be lower than 500 K.

Orientation-selective unzipping of carbon nanotubes.

We carried out first-principles calculations to explore the oxidative longitudinal unzipping of single-walled carbon nanotubes (SWCNTs) of different diameters and chiralities. We found that the initial attack leading to nanotube unzipping prefers to occur in the middle region for armchair tubes, and at the tube ends for zigzag tubes. Once the initial attack has taken place, by overcoming an energy barrier whose value decreases with increasing tube diameter, the subsequent breakage of C-C bonds parallel to the ones broken in the former process is barrierless. The energetically preferred unzipping path is parallel to the tube axis for armchair tubes, resulting in straight zigzag-edged graphene nanoribbons. For zigzag tubes, there are two energetically equivalent unzipping directions corresponding to the opening of two types of C-C bonds tilted towards the tube axis, giving rise to helical unzipping paths. This is disadvantageous for the production of straight graphene ribbons. A local curvature modulation procedure is proposed to efficiently control the location of the initial attack and thus the shape of the produced graphene nanoribbons.

First-principles calculations of AlN nanowires and nanotubes: atomic structures, energetics, and surface states.

We explore the atomic and electronic structures of single-crystalline aluminum nitride nanowires (AlNNWs) and thick-walled aluminum nitride nanotubes (AlNNTs) with the diameters ranging from 0.7 to 2.2 nm by using first-principles calculations and molecular dynamics simulations based on density functional theory (DFT). We find that the preferable lateral facets of AlNNWs and thick-walled AlNNTs are {1010} surfaces, giving rise to hexagonal cross sections. Quite different from the cylindrical network of hexagons revealed in single-walled AlNNTs, the wall of thick-walled AlNNTs displays a wurtzite structure. The strain energies per atom in AlNNWs are proportional to the inverse of the wire diameter, whereas those in thick-walled AlNNTs are independent of tube diameter but proportional to the inverse of the wall thickness. Thick-walled AlNNTs are energetically comparable to AlNNWs of similar diameter, and both of them are energetically more favorable than single-walled AlNNTs. Both AlNNWs and AlNNTs are wide band gap semiconductors accompanied with surface states located in the band gap of bulk wurtzite AlN.

Stopping power and mean free path for low-energy electrons in ten scintillators over energy range of 20-20,000 eV.

Systematic calculations of the stopping powers (SP) and inelastic mean free paths (IMFP) for 20-20,000eV electrons in a group of 10 important scintillators have been carried out. The calculations are based on the dielectric model including the Born-Ochkur exchange correction and the optical energy loss functions (OELFs) are empirically evaluated because of the lack of available experimental optical data for the scintillators under consideration. The evaluated OELFs are examined by both the f-sum rule and the calculation of mean ionization potential. The SP and IMFP data presented here are the first results for the 10 scintillators over the energy range of 20-20,000eV, and are of key importance for the investigation of liquid scintillation counting.

A new calculation on the stopping power and mean free path for low energy electrons in toluene over energy range of 20-10000 eV.

A new calculation of the stopping powers (SP) and inelastic mean free paths (IMFP) for electrons in toluene at energies below 10 keV has been presented. The calculation is based on the dielectric model and on an empirical evaluation approach of optical energy loss function (OELF). The reliability for the evaluated OELFs of several hydrocarbons with available experimental optical data has been systematically checked. For toluene, using the empirical OELF, the evaluated mean ionization potential, is compared with that given by Bragg's rule, and the calculated SP at 10 keV is also compared with the Bethe-Bloch prediction. The present results for SP and IMFP provide an alternative basic data for the study on the energy deposition of low-energy electrons transport through toluene, and also show that the method used in this work may be a good one for evaluating the SP and IMFP for hydrocarbons.

The electronic structure evolution of DNA during its conformation transition process.

We combined classical molecular dynamics (MD) simulation with ab initio calculations to study the electronic structure evolution of DNA during its conformation transition process. By using MD simulation, we obtained the conformation transition trajectory of an oligonucleotide poly(dC)-poly(dG), from which we selected a series of representative conformations and then performed ab initio calculations for these conformations to reveal their electronic structures. Counterintuitively, the results indicate that during the conformation transition process of DNA, thermal fluctuation plays a more important role than global conformation parameters in affecting the electronic structure of DNA.

From pure C(60) to silicon carbon fullerene-based nanotube: an ab initio study.

The energetics, geometrical, and electronic properties of the silicon carbon fullerene-based materials, obtained from C(60) by replacing 12 carbon atoms of the C(60) cage with silicon atoms, are studied based on ab initio calculations. We have found that, of the two C(48)Si(12) isomers obtained, the one with the carbon atoms and the silicon atoms located in separated region, i.e., with a phase-separated structure is more stable. Fullerene-based C(36)Si(24) cluster, C(36)Si(24)-C(36)Si(24) dimer, and the nanotube constructed from the clusters are then studied. The calculations on the electronic properties of these silicon carbon fullerene-based nanomaterials demonstrate that the energy gaps are greatly modified and show a decreasing trend with increasing the size of the clusters. The silicon carbon fullerene-based nanotube has a narrow and direct energy band gap, implying that it is a narrow gap semiconductor and may be a promising candidate for optoelectronic devices.

The electronic structure of a single-walled aluminosilicate nanotube.

The geometric structure and electronic structure of an imogolite nanotube have been studied using density functional theory (DFT). The calculation results indicate that the deformation of the material leads to structural electric charges on the tube wall. This hydrous aluminosilicate single-walled nanotube is a wide gap semiconductor with a direct band gap, E(g)∼3.67 eV at the Γ point, which may be promising for application in optoelectronic devices. In conjunction with the DFT calculations, molecular dynamics simulations based on empirical potentials are also performed to evaluate the mechanical properties of this material.

First-principles study of Co-doped single-walled silicon nanotubes.

We performed spin-polarized density functional calculations to study the stable configurations, energetics and electronic structures of Co-doped single-walled silicon nanotubes (CoSi(2)NTs) with the stoichiometry of CoSi(2). We found that the incorporation of Co atoms into the wall of SiNTs not only effectively stabilizes the tubes but also tunes their electronic properties. The formation energies of the CoSi(2)NTs are much lower than those of pristine SiNTs, indicating the plausibility of these tubes. The electronic structures of the CoSi(2)NTs display the characters of metals. This provides a promising synthetic route to stable SiNTs which may find potential applications in building nanoscale devices.

First-principles study of ZnS nanostructures: nanotubes, nanowires and nanosheets.

We performed first-principles calculations to study the energetics, geometric and electronic properties of zinc sulfide (ZnS) nanostructures. ZnS nanowires (ZnSNWs), nanotubes (ZnSNTs) and nanosheets (ZnSNSs) were considered. Both ZnSNWs and ZnSNTs modeled using hexagonal prisms with the atomic arrangement displaying the characters of wurtzite crystal are more stable than the single-walled ZnS nanotubes presented in previous literature. The energy evolution of ZnSNWs and ZnSNTs as a function of tube diameter and wall thickness was calculated and explained using a simple model. The comparison between the energetics and electronic structures of these ZnS nanostructures was also addressed.

Electron stopping power and inelastic mean free path in amino acids and protein over the energy range of 20-20,000 eV.

Systematic calculations of stopping power (SPs) and inelastic mean free path (IMFP) values for 20-20,000 eV electrons in a group of 15 amino acids and a simple protein have been performed. The calculations are based on the dielectric response model and take into account the exchange effect between the incident electron and target electrons. The optical energy-loss functions for the 15 investigated amino acids and the protein are evaluated by using an empirical approach, because of the lack of experimental optical data. For all the considered materials, the calculated mean ionization potentials are in good agreement with those given by Bragg's rule, and the evaluated SP values at 20 keV converge well to the Bethe-Bloch predictions. The data shown represent the first results of SP and IMFP, for these 15 amino acids and the protein in the energy range below 20 keV, and might be useful for studies of various radiation effects in these materials. In addition, the average energy deposited by inelastic scattering of the electrons on this group of 15 amino acids, on the protein, on Formvar and on DNA, respectively, has been estimated for energies below 20 keV. The dependences of the average energy deposition on the electron energy are given. These results are important for any detailed studies of radiation-induced inactivation of proteins and the DNA.

The effect of salt concentration on DNA conformation transition: a molecular-dynamics study.

We performed three 3-ns molecular dynamics simulations of d(CGCGAATTCGCG)2 using the AMBER 8 package to determine the effect of salt concentration on DNA conformational transitions. All the simulations were started with A-DNA, with different salt concentrations, and converged with B-DNA with similar conformational parameters. However, the dynamic processes of the three MD simulations were very different. We found that the conformation transition was slow in the solution with higher salt concentration. To determine the cause of this retardation, we performed three additional 1.5-ns simulations starting with B-DNA and with the salt concentrations corresponding to the simulations mentioned above. However, astonishingly, there was no delayed conformation evolution found in any of the three simulations. Thus, our simulation conclusion is that higher salt concentrations slows the A --> B conformation transition, but have no effect on the final stable structure. [Figure: see text].

Tuning the electronic structures of semiconducting SiC nanotubes by N and NHx (x=1,2) groups.

We investigate the stable configurations and electronic structures of silicon carbide nanotubes (SiCNTs) decorated by N and NHx (x=1,2) groups by using first-principles calculations. We find that these groups can be chemically incorporated into the network of SiCNTs in different ways, accompanied with the formation of N-C and N-Si bonds. The adsorbing energy of N and NHx (x=1,2) groups on (5,5) and (8,0) SiCNTs ranges from -1.82 to -7.19 eV. The electronic structures of SiCNTs can be effectively modified by these groups and display diverse characters ranging from semiconducting to semimetallic, depending on the chirality of SiCNTs as well as the way of the incorporation of these functional groups. The relationship between the electronic structures and the configurations of these functionalized SiCNTs is also addressed by performing projected density of states combined with Milliken population analysis. These results are expected to open a way to tune the electronic structures of SiCNTs which may have promising applications in building nanodevices.

Manipulating the electronic structures of silicon carbide nanotubes by selected hydrogenation.

We show that the electronic and atomic structures of silicon carbide nanotubes (SiCNTs) undergo dramatic changes with hydrogenation from first-principles calculations based on density-functional theory. The exo-hydrogenation of a single C atom results in acceptor states close to the highest occupied valence band of pristine SiCNT, whereas donor states close to the lowest unoccupied conduction band appear as a Si atom being hydrogenated. Upon fully hydrogenating Si atoms, (8,0) and (6,6) SiCNTs become metallic with very high density of states at the Fermi level. The full hydrogenation of C atoms, on the other hand, increases the band gap to 2.6 eV for (8,0) SiCNT and decreases the band gap to 1.47 eV for (6,6) SiCNT, respectively. The band gap of SiCNTs can also be greatly increased through the hydrogenation of all the atoms.

Distribution patterns and controllable transport of water inside and outside charged single-walled carbon nanotubes.

The density distribution patterns of water inside and outside neutral and charged single-walled carbon nanotubes (SWNTs) soaked in water have been studied using molecular dynamics simulations based on TIP3P potential and Lennard-Jones parameters of CHARMM force field, in conjunction with ab initio calculations to provide the electron density distributions of the systems. Water molecules show different electropism near positively and negatively charged SWNTs. Different density distribution patterns of water, depending on the diameter and chirality of the SWNTs, are observed inside and outside the tube wall. These special distribution patterns formed can be explained in terms of the van der Waals and electrostatic interactions between the water molecules and the carbon atoms on the hexagonal network of carbon nanotubes. The electric field produced by the highly charged SWNTs leads to high filling speed of water molecules, while it prevents them from flowing out of the nanotube. Water molecules enter the neutral SWNTs slowly and can flow out of the nanotube in a fluctuating manner. It indicates that by adjusting the electric charge on the SWNTs, one can control the adsorption and transport behavior of polar molecules in SWNTs to be used as stable storage medium with template effect or transport channels. The transport rate can be tailored by changing the charge on the SWNTs.

Cross sections of electron inelastic interactions in DNA.

The cross sections of electron inelastic interaction in DNA are calculated using the dielectric response theory and Penn statistical approximation, with the exchange correction included. An empirical approach to obtain optical energy loss function is given for the organic compounds without available optical data. Comparisons of the calculated data with available experimental and theoretical results have been done to show the reliability of the approach proposed in this work. Using this approach, the total inelastic cross sections for five bases: guanine, adenine, thymine, cytosine and uracil have been calculated in the energy range of E< or =10 keV and compared with those recently obtained with the Deutsch-Mark formalism and the Binary-Encounter-Bethe model, respectively. An equivalent unit of the DNA molecule is constructed according to the contents of A-T and G-C base pairs in DNA, and is divided into five constituents, i.e. sugar-phosphate and four bases. The total inelastic cross sections for the constructed unit of the DNA molecule and its constituents have also been calculated.