RESUMO
To investigate the thermal stability of Mo/Si multilayers with different initial crystallinities of Mo layers, two kinds of Mo/Si multilayers were deposited by DC magnetron sputtering and annealed at 300°C and 400°C. The period thickness compactions of multilayers with crystalized and quasi-amorphous Mo layers were 0.15 nm and 0.30 nm at 300°C, respectively, and the stronger the crystallinity, the lower the extreme ultraviolet reflectivity loss. At 400°C, the period thickness compactions of multilayers with crystalized and quasi-amorphous Mo layers were 1.25 nm and 1.04 nm, respectively. It was shown that multilayers with a crystalized Mo layer had better thermal stability at 300°C but were less stable at 400°C than multilayers with a quasi-amorphous Mo layer. These changes in stability at 300°C and 400°C were due to the significant transition of the crystalline structure. The transition of the crystal structure leads to increased surface roughness, more interdiffusion, and compound formation.
RESUMO
Using counterdiabatic (CD) driving-aiming at suppression of diabatic transition-in digitized adiabatic evolution has garnered immense interest in quantum protocols and algorithms. However, improving the approximate CD terms with a nested commutator ansatz is a challenging task. In this work, we propose a technique of finding optimal coefficients of the CD terms using a variational quantum circuit. By classical optimization routines, the parameters of this circuit are optimized to provide the coefficients corresponding to the CD terms. Then their improved performance is exemplified in Greenberger-Horne-Zeilinger state preparation on the nearest-neighbour Ising model. Finally, we also show the advantage over the usual quantum approximation optimization algorithm, in terms of fidelity with bounded time. This article is part of the theme issue 'Shortcuts to adiabaticity: theoretical, experimental and interdisciplinary perspectives'.