Trapping integrated molecular devices via local transport circulation.

Interactions between quantum systems and their environments may always result in inevitable decoherence. Isolation of the quantum system from the undesired environmental noise is a great challenge for ideal quantum information processing. Herein, based on a parallelly shaped control-target molecular nanomagnet structure, we report a novel strategy which decouples the target molecular device from its surrounding conduction baths. By tuning the level differences between the control and target orbitals through external gate voltages, one manipulates both, neither or only the target subsystem to contribute to the quantum transport in sequence, corresponding to an "on-off-on" behavior in the linear conductance. In the off window, a local transport circulation develops, preventing the target device from being disturbed by the itinerant electrons. This finding provides a prospective method for confining integrated quantum devices with high intrinsic fidelity, remarkable tunability, and universal suitability.

Phase transitions induced by exchange coupling, magnetic field, and temperature in a strongly correlated molecular trimer with a triangular topology.

Regulating the physical properties such as the quantum phase and the Kondo effect of molecular electronic devices near critical points may play a key role in increasing the robustness of quantum memory, which is a crucial component in quantum information processing. Molecules with a triangular topology are ideal prototypes to reveal the competition among magnetic frustration, Kondo screening, and local inter-molecule exchange interactions. Herein, motivated by a recent work investigating the single-electron tunneling through a redox-active edge-fused porphyrin trimer by using a Hubbard dimer model [J. O. Thomas, J. K. Sowa, B. Limburg, X. Bian, C. Evangeli, J. L. Swett, S. Tewari, J. Baugh, G. C. Schatz, G. A. D. Briggs, H. L. Anderson and J. A. Mol, Chem. Sci., 2021, 12, 11121], we studied the phase transition, the electronic transport, and the thermodynamical properties of a real molecular trimer structure organized in a triangular topology, with and without an external magnetic field, and at zero and non-zero temperatures. Both the Hubbard electron-electron interaction and the Heisenberg exchange interaction are fully taken into account, with the aid of the state-of-the-art numerical renormalization group method. Various kinds of Kondo behaviors and quantum phase transitions are demonstrated, due to the competition among the Ruderman-Kittel-Kasuya-Yosida interaction, the direct exchange coupling, and the Zeeman effect. Our findings may offer deep insights into the manipulation of the quantum phase and the Kondo behavior in a molecular trimer with a triangular topology.

Correlation anisotropy driven Kosterlitz-Thouless-type quantum phase transition in a Kondo simulator.

The precise manipulation of the quantum states of individual atoms/molecules adsorbed on metal surfaces is one of the most exciting frontiers in nanophysics, enabling us to realize novel single molecular logic devices and quantum information processing. Herein, by modeling an iron phthalocyanine molecule adsorbed on the Au(111) surface with a two-impurity Anderson model, we demonstrate that the quantum states of such a system could be adjusted by the uniaxial magnetic anisotropy Dz. For negative Dz, the ground state is dominated by a parallel configuration of the z component of local spins, whereas it turns to be an antiparallel one when Dz becomes positive. Interestingly, we found that these two phases are separated by a Kosterlitz-Thouless-type quantum phase transition, which is confirmed by the critical behaviors of the transmission coefficient and the local magnetic moment. Both phases are associated with spin correlation anisotropy, thus move against the Kondo effect. When the external magnetic field is applied, it first plays a role in compensating for the effect of Dz, and then it contributes significantly to the Zeeman effect for positive Dz, accompanied by the reappearance and the splitting of the Kondo peak, respectively. For fixed negative Dz, only the Zeeman behavior is revealed. Our results provide deep insights into the manipulation of the quantum phase within a single molecular junction.

Kondo effect and RKKY interaction assisted by magnetic anisotropy in a frustrated magnetic molecular device at zero and finite temperature.

Molecular magnetic compounds, which combine the advantages of nanoscale behaviors with the properties of bulk magnetic materials, are particularly attractive in the fields of high-density information storage and quantum computing. Before molecular electronic devices can be fabricated, a crucial task is the measurement and understanding of the transport behaviors. Herein, we consider a magnetic molecular trimer sandwiched between two metal electrodes, and, with the aid of the sophisticated full density matrix numerical renormalization group (FDM-NRG) technique, we study the effect of magnetic anisotropy on the charge transport properties, illustrated by the local density of states (LDOS, which is proportional to the differential conductance), the Kondo effect, and the temperature and inter-monomer hopping robustness. Three kinds of energy peaks are clarified in the LDOS: the Coulomb, the Kondo and the Ruderman-Kittel-Kasuya-Yosida (RKKY) peaks. The local magnetic moment and entropy go through four different regimes as the temperature decreases. The Kondo temperature TK could be described by a generalized Haldane's formula, revealing in detail the process where the local moment is partially screened by the itinerant electrons. A relationship between the width of the Kondo resonant peak WK and TK is built, ensuring the extraction of TK from WK in an efficient way. As the inter-monomer hopping integral varies, the ground state of the trimer changes from a spin quadruplet to a magnetically frustrated phase, then to an orbital spin singlet through two first order quantum phase transitions. In the first two phases, the Kondo peak in the transmission coefficient reaches its unitary limit, while in the orbital spin singlet, it is totally suppressed. We demonstrate that magnetic anisotropy may also induce the Kondo effect, even without Coulomb repulsion, hence it is replaceable in the many-body behaviours at low temperature.

Synchronously voltage-manipulable spin reversing and selecting assisted by exchange coupling in a monomeric dimer with magnetic interface.

The use of the molecular spin state as a quantum of next-generation information technology is receiving impressive research attention, within which the fundamental issues include manipulating the phase transition between the spin-up and -down states and generating spin polarized current. The spinterface between ferromagnetic electrodes and a molecular bridge represents one of the most intriguing elements in this context. Herein, by means of the celebrated numerical renormalization group technique, we present an original way to realize spin reversal in a monomeric dimer. Our scheme is based on the exchange interactions between electronic spins on one monomer and those on the other one or on the electrodes, which could be easily controlled through purely electronic technology. Through a careful engineering of the interfacial parameters, one of the monomers is devoted to the spin reversing, whereas the other one contributes to the spin selecting. The charge numbers of spin-up and -down electrons swap their respective occupancies at some particular points, indicating charge sensing between different spins. The competition between the spinterface and the molecular energy level results in charge oscillating in a single spin channel, which is unfavorable to the spin selecting. The observation may provide a prospective example for a multifunctional magnetoelectronics molecular device, which works without any external magnetic field.

Emergent electronically-controllable local-field-inducer based on a molecular break-junction with magnetic radical.

Molecular spintronics devices are receiving extensive research attention, due to their potential applications as the smallest memory and logic elements. A most fundamental issue in this field lies in generating spin polarized currents. In this communication, with the aid of the celebrated Wilson's numerical renormalization group (NRG) method, we propose theoretically a novel strategy to induce a local magnetic field that only affects the strongly correlated molecule under consideration, and could easily be manipulated through purely electronic technologies. It is also demonstrated that the device may lead to bidirectional spin polarization, where perfectly polarized spin-up and -down currents could be obtained by simply adjusting the energy level of the molecule to different regions along a single direction. Our suggested model is based on a molecular break-junction with a magnetic radical. It may provide a prospective example of a magnetoelectronics device at the molecular scale, which works without an external magnetic field.

High spin polarization in formamidinium transition metal iodides: first principles prediction of novel half-metals and spin gapless semiconductors.

The electronic structure and magnetic properties of ten formamidinium transition metal iodides in the ground state and under strain have been studied. These formamidinium transition metal iodides have a stable cubic perovskite structure. In the ground state, FAVI3 is a spin gapless semiconductor, and FAScI3, FATiI3, FACrI3, FAFeI3, FACoI3 and FANiI3 are ferromagnetic half-metals. They all have 100% spin polarization and integer total magnetic moment. Under the action of strain, the high spin polarization of some formamidinium transition metal iodides can still be well maintained, and several novel spin gapless semiconductors such as FATiI3, FAFeI3 and FACoI3 have been discovered. Magnetic studies show that these formamidinium transition metal iodides with half-metal, semiconductor and spin-gapless semiconductor properties have integral total magnetic moments under strain ranging from -10.0% to 10.0%. These newly discovered half-metallic ferromagnetic materials and spin gapless semiconductors have broad application prospects in the field of spintronics due to their high spin polarization.

Bidirectional spin filter in a triple orbital molecule junction by tuning the magnetic field along a single direction.

Metal-molecule-metal junction is considered the basing block and key element of molecular spintronic devices, within which to generate spin polarized currents is one of the most fundamental issues for quantum computation and quantum information. In this paper, by employing a parallel triple orbital molecule junction with large inter-orbital tunneling couplings, we propose theoretically a bidirectional spin filter where both spin-up and spin-down currents could be obtained by simply adjusting the external magnetic field to different regimes along a single direction, and the filtered efficiencies could reach almost 100%. The Zeeman effect and the occupancy switching for the bonding and anti-bonding states are found to be responsible for the spin selective transport. We demonstrate that our scheme is robust for large parameter spaces of the orbital energy level, except the particle-hole symmetric point, and is widely suitable for the strong-, weak-, and non-interacting cases. To implement these problems, we use the Wilson's numerical renormalization group technique to treat such systems.

Yu-Shiba-Rusinov states assisted by asymmetric Coulomb repulsion in a bipartite molecular device.

Interfacing magnetism with superconducting condensates are promising candidates holding Majorana bound states with which fault-tolerant quantum computation could be implemented. Within this field, understanding the detailed dynamics is important both for fundamental reasons and for the development of innovative quantum technologies. Herein, motivated by a molecular magnet Tb2Pc3interacting with a superconducting Pb(111) substrate, which results in spin-orbital Yu-Shiba-Rusinov (YSR) states, as is affirmed by a theoretical simulation with the aid of the numerical renormalization group technique (see Xiaet al2022Nat. Commun.136388), we study the YSR states and quantum phase transitions (QPTs) in a bipartite molecular device adsorbed on ans-wave superconducting substrate. We highlight the effect of asymmetric Coulomb repulsion by computing the spectrum function and spin correlation function in various parameter regimes. We demonstrate that if one impurity is non-interacting, there are no YSR states in both impurities with any repulsion value in the other impurity. Whereas if the repulsion in one impurity is strong, the YSR states are observed in both impurities, and a QPT arises as the repulsion in the other impurity sweeps, assisted by the competition between the superconducting singlet (Cooper pair) and the Kondo singlet. The evolution of YSR states distinguishes from the single impurity case and can be well interpreted by the energy scales of the isotropic superconducting gap parameter, as well as the two Kondo temperatures. Our findings provide theoretical insights into the phase diagram of two magnetic impurities on a superconducting host and shine light on the effects induced by asymmetric Coulomb repulsion on many-body interactions.

Stable antiferromagnetic property and tunable electronic structure of two-dimensional MnPX3(X = S and Se) from pristine structure to Janus phase.

Transition-metal phosphorus trichalcogenides have been considered as very promising two-dimensional (2D) magnetic candidates up-to-date. We performed a systematical first-principles study on the electronic structures and magnetic properties of pristine MnPX3(X = S and Se) and Janus Mn2P2S3Se3monolayers. All monolayers behave as a direct-band-gap semiconductor in antiferromagnetic ground state which is caused by strong direct and indirect exchange interactions. It is found that the electronic structures and magnetic properties can be manipulated by Janus phase. The calculated band gap is 2.44 eV, 1.80 eV and 1.86 eV for MnPS3, MnPSe3and Mn2P2S3Se3with a valley polarization with consideration of spin-orbital coupling (SOC), respectively. In particular, significant energy-splittings emerge in the SOC-band structures of Janus Mn2P2S3Se3due to its broken-inversion-symmetry. Estimated by Monte Carlo simulations, the Néel temperature is 96 K, 71 K and 79 K based on Ising model while halved down to 41 K, 33 K and 36 K on the basis ofXYmodel for MnPS3, MnPSe3and Mn2P2S3Se3, respectively, indicating theXYmodel should be more reliable to describe the spin dynamics. Our research offers an insight into the magnetic mechanism and paves a feasible path to modulate the magnetism for 2D magnets in realistic applications on spintronics.

Investigations on structural, electronic and optical properties of ZnO in two-dimensional configurations by first-principles calculations.

The electronic structures and optical properties of two-dimensional (2D) ZnO monolayers in a series of configurations were systematically investigated by first-principles calculations with HubbardUevaluated by the linear response approach. Three types of 2D ZnO monolayers, as planer hexagonal-honeycomb (Plan), double-layer honeycomb (Dlhc), and corrugated tetragonal (Tile) structures, show a mechanical and dynamical stability, while the Dlhc-ZnO is the most energetically stable configuration and Plan-ZnO is the second one. Each 2D ZnO monolayer behaves as a semiconductor with that Plan-, Dlhc-ZnO have a direct band gap of 1.81 eV and 1.85 eV at theΓpoint, respectively, while Tile-ZnO has an indirect band gap of 2.03 eV. Interestingly, the 2D ZnO monolayers all show a typical near-free-electron character for the bottom conduction band with a small effective mass, leading to a tremendous optical absorption in the whole visible and ultraviolet window, and this origination was further confirmed by the transition dipole moment. Our investigations suggest a potential candidate in the photoelectric field and provide a theoretical guidance for the exploration of wide-band-gap 2D semiconductors.

Suppressed Kondo effect and Kosterlitz-Thouless-type phase transition induced by level difference in a triple dot device.

Quantum dot system provides an ideal platform for quantum information processing, within which to demonstrate the quantum states is one of the most important issue for quantum simulation and quantum computation. In this paper, we report a peculiar electron state in a parallel triple dot device where the Ruderman-Kittel-Kasuya-Yosida interaction is invalid when the level differences of the dots sweep into appropriate regime. This extraordinary tendency then results in an antiferromagnetic spin coupling between two of the dots and may lead to zero or full conductance, relying deeply on the relation of the two level spacings. e.g. when the level differences are kept equal, the Kondo effect is totally suppressed although the dots are triply occupied, since in this case a local inter-dot transport loop is found to play an important role in the transmission coefficient. By contrast, when the differences are retained symmetric, the Kondo peak reaches nearly to its unitary limit, owing to that the inter-dot transport process is significantly suppressed. To approach these problems, voltage controllable quantum phase transitions of Kosterlitz-Thouless type and first order are shown, and possible pictures related to the many-body effect and the effective Kondo model are given.

Ab-Initio Investigations of Magnetic Properties and Induced Half-Metallicity in Ga1-xMnxP (x = 0.03, 0.25, 0.5, and 0.75) Alloys.

Ab-initio calculations are performed to examine the electronic structures and magnetic properties of spin-polarized Ga1-xMnxP (x = 0.03, 0.25, 0.5, and 0.75) ternary alloys. In order to perceive viable half-metallic (HM) states and unprecedented diluted magnetic semiconductors (DMSs) such as spintronic materials, the full potential linearized augmented plane wave method is utilized within the generalized gradient approximation (GGA). In order to tackle the correlation effects on 3d states of Mn atoms, we also employ the Hubbard U (GGA + U) technique to compute the magnetic properties of an Mn-doped GaP compound. We discuss the emerged global magnetic moments and the robustness of half-metallicity by varying the Mn composition in the GaP compound. Using GGA + U, the results of the density of states demonstrate that the incorporation of Mn develops a half-metallic state in the GaP compound with an engendered band gap at the Fermi level (EF) in the spin-down state. Accordingly, the half-metallic feature is produced through the hybridization of Mn-d and P-p orbitals. However, the half-metallic character is present at a low x composition with the GGA procedure. The produced magnetic state occurs in these materials, which is a consequence of the exchange interactions between the Mn-element and the host GaP system. For the considered alloys, we estimated the X-ray absorption spectra at the K edge of Mn. A thorough clarification of the pre-edge peaks is provided via the results of the theoretical absorption spectra. It is inferred that the valence state of Mn in Ga1-xMnxP alloys is +3. The predicted theoretical determinations surmise that the Mn-incorporated GaP semiconductor could inevitably be employed in spintronic devices.

Gate-controlled transitions in triple dots with interdot repulsion and magnetic field.

We study the quantum phase transition (QPT) and electronic transport in triple quantum dots for a wide range of the gate voltage ϵ. We focus on the effect of the interdot repulsion V and the magnetic field B. In the case of particle-hole (p-h) symmetry and B = 0, we find the local quadruplet-doublet transition of first order when V increases to a critical point V(c) ≈ U, where U is the on-site repulsion. Beyond the p-h symmetry, the sequence of the QPTs depends on ϵ. For small ϵ, a first order doublet-singlet transition is observed. For middle ϵ, we find the quadruplet-triplet transition of first order at V(c1) and the triplet-singlet transition of the Kosterlitz-Thouless type at V(c2). For large ϵ, there are two kinds of first order QPT with phase sequence quadruplet-triplet-doublet. The magnetic field B compensates for the effect of V. For V > U, as B increases we find a first order or second order QPT from a low-spin state to a high-spin state. The restoring of the Kondo effect and a perfect spin filtering is realized in the appropriate regime of the magnetic field.