RESUMO
Perovskite light-emitting diodes (PeLEDs) have shown incalculable application potential in the fields of next-generation displays and light communication owing to the rapidly increased external quantum efficiencies (EQEs). However, most PeLEDs obtain a maximum EQE at small current density (J) region and suffer from severe efficiency roll-off in different extents. Herein, it is demonstrated that the dopant with large dipole moment like KBF4 facilitates the effective dielectric regulation of perovskite emissive layer. The increased dielectric constant lowers the exciton binding energy and suppresses the Auger recombination of the 2D/3D segregated perovskite structure, which improves the photoluminescence quantum yield remarkably at an excitation intensity up to 103 mW cm-2 . Accordingly, the top-emission PeLED that delivers a high maximum EQE above 20% is fabricated and can retain EQE > 10% at an extremely high J of 708 mA cm-2 . These results represent one of the most efficient top-emission PeLEDs with ultra-low efficiency roll-off, which provide a viable methodology for tuning the dielectric response of perovskite films for improved high radiance performance of perovskite electroluminescence devices.
RESUMO
Vacuum vapor deposition (VVD) is a promising way to advancing the commercialization of perovskite light sources owing to its convenience for wafer-scale mass production and compatibility with silicon photonics manufacturing infrastructure. However, the light emission performance of VVD-grown perovskites still lags far behind that of the conventional solution-processed counterparts due to their inferior luminescence properties. Here, a 0D/3D cesium-lead-bromide perovskite composite film is prepared on Si/SiO2 substrates through composition modulation with the VVD method, which exhibits an ultralow amplified spontaneous emission (ASE) threshold down to 14.3 µJ cm-2 in the optimal films, which is on par with that of the solution-processed counterparts. Meanwhile, they also display intriguing operational stability with negligible emission intensity decay under continuous excitation above ASE threshold for 4 h in the air. The outstanding ASE performance mainly originates from the reduced trap density and weakened electron-phonon coupling in the 3D CsPbBr3 phase enabled by the incorporation of the 0D Cs4 PbBr6 phase. Finally, by integrating the composite film with the distributed feedback (DFB) cavity, DFB lasing is achieved with a low threshold of 18.2 µJ cm-2 under nanosecond-pulsed laser pumping, which highlights the potential of VVD-processed perovskites for developing high-performance lasers.
RESUMO
Challenges remain hindering the performance and stability of inverted perovskite solar cells (PSCs), particularly for the nonstable interface between lead halide perovskite and charge extraction metal oxide layer. Herein, a simple yet scalable interfacial strategy to facilitate the assemble of high-performance inverted PSCs and scale-up modules is reported. The hybrid interfacial layer containing self-assembly triphenylamine and conjugated poly(arylamine) simultaneously improves the chemical stability, charge extraction, and energy level alignment of hole-selective interface, meanwhile promoting perovskite crystallization. Consequently, the correspondent inverted PSCs and modules achieve remarkable power conversion efficiencies (PCEs) of 24.5% and 20.7% (aperture area of 19.4 cm2 ), respectively. The PSCs maintain over 80% of its initial efficiency under one-sun equivalent illumination of 1200 h. This strategy is also effective to perovskite with various bandgaps, demonstrating the highest PCE of 19.6% for the 1.76-eV bandgap PSCs. Overall, this work provides a simple yet scalable interfacial strategy for obtaining state-of-the-art inverted PSCs and modules.