High power single-frequency Innoslab amplifier.

A laser diode array (LDA) end-pumped continuous-wave single-frequency Innoslab amplifier has been demonstrated. The Gaussian ray bundle method was used to model the light propagation in the Innoslab amplifier for the first time to the best of our knowledge. With discrete reflectors, the maximum output of 60 W with a linewidth of 44 MHz was achieved under the pump power of 245 W, corresponding to the optical-optical efficiency of 24.5%. The beam quality factor M2 at the output power of 51 W in the horizontal and vertical direction was measured to be 1.4 and 1.3, respectively. The long-term power instability in 2 h was less than 0.25%.

759 fs pulse generation with Nd3+-doped CNGS ordered crystal based on a semiconductor saturable absorber mirror.

A diode-pumped passively continuous wave mode-locked laser at 1064.2 nm based on an ordered Nd:CNGS crystal has been experimentally investigated (for the first time, to our knowledge). Stable mode-locked pulses with a duration of 759 fs were produced at a repetition rate of 43.2 MHz. It is the shortest pulse generation of mode-locked lasers based on Nd3+-doped ordered crystal, as far as we know. A maximum average mode-locked output power of 133 mW was obtained at the absorbed pumped power of 6.7 W, and corresponding single-pulse energy and peak power were determined to be 3.1 nJ and 4.1 kW, respectively. The results indicate that the Nd:CNGS as an ordered crystal is indeed a potential candidate as a femtosecond laser gain medium.

Femtosecond pulse generation with an a-cut Nd:CaYAlO4 disordered crystal.

We experimentally demonstrated a diode-pumped 587 fs ultrafast laser by using an a-cut Nd:CaYAlO4 crystal. Pumped by an 808 nm fiber-coupled laser diode, a stable continuous-wave mode-locked ultrafast laser was achieved with a semiconductor saturable absorber. The ultrafast pulses had a repetition rate of 75 MHz at the center wavelength of 1080.8 nm. A maximum average output power of the mode-locked laser reached 375 mW delivering a slope efficiency of 9%.

760 fs diode-pumped mode-locked laser with Yb:LuAG crystal at 1032 nm.

In this study, we experimentally demonstrate the generation of 760 fs pulse duration from a diode-pumped Yb:LuAG mode-locked laser at 1032 nm. At the repetition rate of 58.6 MHz, the maximum average power of 1.07 W was obtained, corresponding to the peak power of 24 kW. To our knowledge, these results represent the shortest pulse duration and highest peak power ever obtained for a 1032 nm mode-locked laser with Yb:LuAG crystal.

High-efficiency femtosecond Yb:Gd3Al(0.5)Ga(4.5)O12 mode-locked laser based on reduced graphene oxide.

A diode-pumped Yb-doped Gd(3)Al(0.5)Ga(4.5)O(12) mode-locked bulk laser based on chemically reduced graphene oxide (RGO) has been demonstrated for the first time to our best knowledge. Pulses with duration of 643 fs were produced at the central wavelength of 1041.1 nm. A maximum average output power of 0.8 W was obtained from the RGO mode-locked laser, corresponding to a slope efficiency of 20.1% and a peak power of 27.6 kW. The results indicate that RGO is suitable for obtaining high-power and high-efficiency ultrafast lasers.

Efficient graphene Q switching and mode locking of 1.34 µm neodymium lasers.

We demonstrate that few-layered graphene sheets used as a saturable absorber can provide efficient Q-switching and mode-locking modulation in 1.34 µm Nd:GdVO(4) bulk lasers. The minimum Q-switched pulses were 450 ns for 260 mW average power, 43 kHz repetition rate, and 2.5 µJ pulse energy. For the mode-locked laser, an average power of 1.29 W was achieved with 11 ps pulse duration and 13 nJ pulse energy. To our knowledge, this average power is the highest yet obtained from a graphene mode-locked laser, and the corresponding optical-optical efficiency of 23% is the best result among 1.3 µm neodymium mode-locked lasers. The quality factor M(2) of the Q-switched beam was 1.4 and 1.6 in the horizontal and longitudinal planes, respectively, and the M(2) of the mode-locked beam reached 1.1 and 1.0. These results clearly indicate the advantages of few-layered graphene as a saturable absorber.

Diode-pumped passively mode-locked Nd:YAG laser at 1338 nm with a semiconductor saturable absorber mirror.

We demonstrate a diode-end-pumped passively mode-locked 1338 nm Nd:YAG laser with a semiconductor saturable absorber mirror. At the absorbed pump power of 8.89 W, an average output power of 1.12 W was obtained with a slope efficiency of 14%. The pulse width was 22.4 ps with a repetition rate of 63.9 MHz, corresponding to a peak power of 782 W. In addition, the bandwidth of the mode-locking spectrum is as narrow as 20.44 GHz, which shows the potential application in long-distance ranging and fiber information transmission because of the low dispersion of these ultrashort pulses.

V3+:YAG as the saturable absorber for a diode-pumped quasi-three-level dual-wavelength Nd:GGG laser.

The performance of a diode-end-pumped passively Q-switched dual-wavelength Nd:GGG laser operating at 932.9 and 936.5 nm with V(3+):YAG as the saturable absorber was demonstrated for the first time to the best of our knowledge. The maximum dual-wavelength average output power of 150 mW was achieved with a T = 2% output coupler under the absorbed pump power of 2.55 W, corresponding to the optical-to-optical conversion and slope efficiency of 5.9% and 8.0%, respectively. The minimum pulse width was 395 ns with the pulse repetition frequency of 140 kHz, which was attained with a T = 5% output coupler under the absorbed pump power of 2.55 W.

Diode-pumped passively Q-switched Nd:Gd0.5Y0.5VO4 laser at 1.34 microm with V3+:YAG as the saturable absorber.

The performance of a diode-pumped passively Q-switched Nd:Gd(0.5)Y(0.5)VO(4) laser at 1.34 microm with V(3+):YAG as the saturable absorber was demonstrated for the first time to the best of our knowledge. The focal lengths of thermal lens in the diode-end-pumped Nd:Gd(0.5)Y(0.5)VO(4) laser for the 1.34 microm transition was experimentally investigated, with the corresponding proportion constant estimated to be approximately1.5x10(4) W/mm. For the passive Q-switching operation, the maximum average output power of 0.96 W was achieved under the pump power of 7.28 W, corresponding to optical-to-optical conversion and slope efficiency of 13.2% and 17.6%, respectively. The minimum pulse width attained was 47.8 ns with the pulse repetition frequency of 76 kHz, with the single pulse energy and peak power estimated to be 8.7 microJ and 182 W, respectively.

Optical nonlinearity engineering of a bismuth telluride saturable absorber and application of a pulsed solid state laser therein.

Saturable absorbers (SAs) have interesting applications for the realization of pulsed lasers in various wavelengths of fiber and solid-state lasers. Topological insulators (TIs) have been recently discovered to feature saturable absorption due to their unique band structure. In this study, high-purity layers of Bi2Te3 thin film SA have been successfully prepared using the spin coating-coreduction approach (SCCA). Compared with the typical method of preparing SAs, the SCCA can be used to prepare topological insulator saturable absorbers (TISAs) with high optical quality, large area consistency, and controllable thickness, which is critical for pulsed lasers. To the best of our knowledge, this study is the first observation and discussion of clear thickness-dependent optical nonlinearity. In this study, a Q-switched bulk Nd:YAG laser is demonstrated and investigated using the prepared TISA as the absorber. The timing jitter and amplitude fluctuation of the stable pulse laser indicated that the SCCA is suitable for fabricating a Bi2Te3 SA. Furthermore, the SCCA enables the establishment of a pulsing laser through saturation intensity engineering.