High-efficient subwavelength structure engineered grating couplers for 2-µm waveband high-speed data transmission.

The 2-µm waveband is becoming an emerging window for next-generation high-speed optical communication. To enable on-chip high-speed data transmission, improving the signal-to-noise ratio (SNR) by suppressing the coupling loss of a silicon chip is critical. Here, we report grating couplers for TE and TM polarized light at the 2-µm waveband. With a single-step fully etched process on the 340 nm silicon-on-insulator (SOI) platform, the devices experimentally demonstrate high coupling efficiency of -4.0 dB and 1-dB bandwidth of 70 nm for the TE polarized light, while -4.5 dB coupling efficiency and 58 nm 1-dB bandwidth for the TM polarized light. For comprehensive performance, both of them are among the best grating couplers operating in the 2-µm waveband so far. We also demonstrate 81Gbps high-speed on-chip data transmission using pulse amplitude modulation 8-level (PAM-8) signals.

High-efficiency mid-infrared on-chip silicon grating couplers for perfectly vertical coupling.

We present, to our knowledge, the first experimental demonstration of two on-chip gratings for perfectly vertical coupling at wavelengths of 3350 nm and 3550 nm, respectively. An anti-backreflection unit containing a fully etched trench and a subwavelength pillar is introduced in each grating period, together with a binary-approximated blazed unit, interleaving fully and shallow-etched slots in 500-nm thick silicon film. Both gratings show a strong ability to eliminate backreflection and provide predicted directionality of around 80%. The physical theoretical analysis is applied during further apodization for mitigating the computation of the optimization algorithm, improving the efficiency and optimization reliability, and increasing the fabrication robustness. The measured coupling efficiencies (CEs) of the gratings are -5.58 dB and -4.34 dB at wavelengths of 3350 nm and 3550 nm, with a 3-dB bandwidth of at least 87 nm and 210 nm, respectively.

Subwavelength structure engineered passband filter for the 2-µm wave band.

In this work, we experimentally demonstrate a passband filter for the 2-µm wave band on the silicon-on-insulator platform. The device consists of a strip waveguide and an apodized subwavelength-structured waveguide. Fabricated on a 340-nm-thick silicon membrane, the proposed passband filter shows a 3-dB bandwidth of 16-33 nm, a high sidelobe suppression ratio (SLSR) of 24 dB, and a low insertion loss (IL) of 0.4 dB.

High-order exceptional point based optical sensor.

Exceptional points (EPs) could potentially enhance the sensitivity of an optical sensing system by orders of magnitude. Higher-order EP systems, having more complex physics, can further boost this parameter. In this paper, we investigate the response order of high-order non-Hermitian systems and provide a guideline for designing a sensor with high response order. Based on this design rule, we propose and demonstrate an optical sensor with a fourth-order response, and analyze its associated properties. The four resonant wavelengths of our optical sensor simultaneously collapse at a high-order exceptional point in the parameter space, providing a fourth root relation between the amount of wavelength splitting and the amplitude of the perturbation. A large sensitivity enhancement factor over 100, is observed when the wavelength splitting is compared with traditional single resonator-based sensors under small perturbation conditions.

Ultra-compact polarization-independent 3 dB power splitter in silicon.

We experimentally demonstrate an ultra-compact polarization-independent 3 dB power splitter on the silicon-on-insulator platform. Subwavelength structure engineering is employed to balance the coupling coefficients of TE and TM polarizations as well as a footprint reduction. The device possesses ultra-compact (1.2µm×2.62µm) and polarization-independent features with an operating bandwidth over 50 nm (from 1540 to 1590 nm).

High-speed silicon modulator with band equalization.

Electro-optic modulation up to 70 Gbit/s has been demonstrated using a silicon Mach-Zehnder modulator with a bias voltage of -1.5 V. In a wide frequency range from DC, an increasing input impedance of the modulator was designed to equalize its electro-optic frequency response. Without a bias voltage, the 3 dB bandwidth was measured as 35 GHz and it is predicted to be as high as 55 GHz at -3 V bias. Frequency responses of the modulator operated with counter-propagating waves were tested to verify the proposed prediction model.

Nonblocking 4×4 silicon electro-optic switch matrix with push-pull drive.

A compact rearrangeable nonblocking 4×4 silicon electro-optic switch matrix based on a Spanke-Benes network is proposed and fabricated by a 0.18 µm standard commercial complementary metal-oxide semiconductor line. By respectively modulating the two modulation arms with a push-pull drive, a cross talk (CT) of less than -18 dB is obtained for the switching element with 150-µm-long modulation arms. The total steady-state power consumption of the switch matrix ranges from 4.46 to 35.92 mW for different routing states. The CT values of the routing state with the minimum and maximum power consumptions are less than -19 dB and less than -12 dB, respectively.