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1.
Materials (Basel) ; 16(6)2023 Mar 18.
Artigo em Inglês | MEDLINE | ID: mdl-36984314

RESUMO

Oxide-dispersion-strengthened (ODS) steel is considered as a promising candidate structural material for nuclear applications. In this study, the microstructure and mechanical properties of Y4Zr3O12-added Fe-13.5Cr-2W ODS steels, containing high contents of C and N, prepared by mechanical alloying (MA) and two-step spark plasma sintering (SPS), were investigated. The results showed that pure Y4Zr3O12 powders, with a grain size of 3.5 nm, were well prepared with NH3·H2O addition by the sol-gel method in advance, in order to avoid the formation of some coarse or undesired oxides. W was completely dissolved into the matrix after 48 h of ball milling at 300 rpm, and the main elements were uniformly distributed on the surface of the milled powders. The unexpected face-centered cubic (FCC, γ)/body-centered cubic (BCC, α) dual-phase structure of the sintered specimens, could be explained by the unexpectedly high contents of C and N from the raw powder production process, fast-sintering characteristic of SPS, and inhibitory effect of W on the diffusion of C. The experimental results were approximately consistent with the simulation results from the Thermo Calc software. The temperature combination of 800 °C and 1100 °C during the SPS process, provided a relatively more homogeneous microstructure, while the combination of 750 °C and 1150 °C, provided the highest ultimate tensile strength (UTS), of 1038 MPa, with the highest uniform elongation (UE), of 6.2%. M23C6, Cr2O3, M2(C,N), and other precipitates, were mainly distributed at grain boundaries, especially at the triple junctions, which led to Cr depletion at grain boundaries.

2.
ACS Nano ; 15(6): 10532-10541, 2021 Jun 22.
Artigo em Inglês | MEDLINE | ID: mdl-34076407

RESUMO

As an eco-friendly thermoelectric material, Cu2SnSe3 has recently drawn much attention. However, its high electrical resistivity ρ and low thermopower S prohibit its thermoelectric performance. Herein, we show that a widened band gap and the increased density of states are achieved via S alloying, resulting in 1.6 times enhancement of S (from 170 to 277 µV/K). Moreover, doping In at the Sn site can cause a 19-fold decrease of ρ and a 2.2 times enhancement of S (at room temperature) due to both multivalence bands' participation in electrical transport and the further enhancement of the density of states effective mass, which allows a sharp increase in the power factor. As a result, PF = 9.3 µW cm-1 K-2 was achieved at ∼800 K for the Cu2Sn0.82In0.18Se2.7S0.3 sample. Besides, as large as 44% reduction of lattice thermal conductivity is obtained via intensified phonon scattering by In-doping-induced formation of multidimensional defects, such as Sn vacancies, dislocations, twin boundaries, and CuInSe2 nanoprecipitates. Consequently, a record high figure of merit of ZT = 1.51 at 858 K is acquired for Cu2Sn0.82In0.18Se2.7S0.3, which is 4.7-fold larger than that of pristine Cu2SnSe3.

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