Aligned carbon nanotubes as polarization-sensitive, molecular near-field detectors.

Near-field scanning optical microscopes are widely used in imaging of subwavelength features in various material systems and nanostructures. For a variety of applications, polarization-sensitive near-field probes can provide valuable information on the nature and symmetry of the imaged nanoparticles and emitters. Conventional near-field optical microscopy lacks in-plane polarization sensitivity. Here, we use aligned single-wall carbon nanotubes as polarization-sensitive molecular scale probes to image the transverse near-field components of an optical Hertzian dipole antenna. Because of the Raman "antenna effect" in carbon nanotubes, only the near-field components along the nanotube axis are detected. These findings demonstrate that aligned carbon nanotubes can be used as polarization-sensitive near-field detectors.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection.

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

Broadband ZnO single-nanowire light-emitting diode.

We present a novel technique for reliable electrical injection into single semiconductor nanowires for light-emitting diodes and lasers. The method makes use of a high-resolution negative electron-beam resist and direct electron-beam patterning for the precise fabrication of a metallic top contact along the length of the nanowire, while a planar substrate is used as a bottom contact. It can be applied to any nanowire structure with an arbitrary cross section. We demonstrate this technique by constructing the first zinc oxide single-nanowire light-emitting diode. The device exhibits broad sub-bandgap emission at room temperature.