Improving quantum gate fidelities by using a qubit to measure microwave pulse distortions.

We present a new method for determining pulse imperfections and improving the single-gate fidelity in a superconducting qubit. By applying consecutive positive and negative π pulses, we amplify the qubit evolution due to microwave pulse distortions, which causes the qubit state to rotate around an axis perpendicular to the intended rotation axis. Measuring these rotations as a function of pulse period allows us to reconstruct the shape of the microwave pulse arriving at the sample. Using the extracted response to predistort the input signal, we are able to reduce the average error per gate by 37%, which enables us to reach an average single-qubit gate fidelity higher than 0.998.

All-optical coherent population trapping with defect spin ensembles in silicon carbide.

Divacancy defects in silicon carbide have long-lived electronic spin states and sharp optical transitions. Because of the various polytypes of SiC, hundreds of unique divacancies exist, many with spin properties comparable to the nitrogen-vacancy center in diamond. If ensembles of such spins can be all-optically manipulated, they make compelling candidate systems for quantum-enhanced memory, communication, and sensing applications. We report here direct all-optical addressing of basal plane-oriented divacancy spins in 4H-SiC. By means of magneto-spectroscopy, we fully identify the spin triplet structure of both the ground and the excited state, and use this for tuning of transition dipole moments between particular spin levels. We also identify a role for relaxation via intersystem crossing. Building on these results, we demonstrate coherent population trapping -a key effect for quantum state transfer between spins and photons- for divacancy sub-ensembles along particular crystal axes. These results, combined with the flexibility of SiC polytypes and device processing, put SiC at the forefront of quantum information science in the solid state.