Thermopower in Underpotential Deposition-Based Molecular Junctions.

Underpotential deposition (UPD) is an intriguing means for tailoring the interfacial electronic structure of an adsorbate at a substrate. Here we investigate the impact of UPD on thermoelectricity occurring in molecular tunnel junctions based on alkyl self-assembled monolayers (SAMs). We observed noticeable enhancements in the Seebeck coefficient of alkanoic acid and alkanethiol monolayers, by up to 2- and 4-fold, respectively, upon replacement of a conventional Au electrode with an analogous bimetallic electrode, Cu UPD on Au. Quantum transport calculations indicated that the increased Seebeck coefficients are due to the UPD-induced changes in the shape or position of transmission resonances corresponding to gateway orbitals, which depend on the choice of the anchor group. Our work unveils UPD as a potent means for altering the shape of the tunneling energy barrier at the molecule-electrode contact of alkyl SAM-based junctions and hence enhancing thermoelectric performance.

Enhanced Thermoelectricity in Metal-[60]Fullerene-Graphene Molecular Junctions.

The thermoelectric properties of molecular junctions consisting of a metal Pt electrode contacting [60]fullerene derivatives covalently bound to a graphene electrode have been studied by using a conducting-probe atomic force microscope (c-AFM). The [60]fullerene derivatives are covalently linked to the graphene via two meta-connected phenyl rings, two para-connected phenyl rings, or a single phenyl ring. We find that the magnitude of the Seebeck coefficient is up to nine times larger than that of Au-C60-Pt molecular junctions. Moreover, the sign of the thermopower can be either positive or negative depending on the details of the binding geometry and on the local value of the Fermi energy. Our results demonstrate the potential of using graphene electrodes for controlling and enhancing the thermoelectric properties of molecular junctions and confirm the outstanding performance of [60]fullerene derivatives.

Thermopower in Transition from Tunneling to Hopping.

The Seebeck effect of a molecular junction in a hopping regime or tunneling-to-hopping transition remains uncertain. This paper describes the Seebeck effect in molecular epitaxy films (OPIn where n = 1-9) based on imine condensation between an aryl amine and aldehyde and investigates how the Seebeck coefficient (S, µV/K) varies at the crossover region. The S value of OPIn linearly increased with increasing the molecular length (d, nm), ranging from 7.2 to 38.0 µV/K. The increasing rate changed from 0.99 to 0.38 µV·K-1 Å-1 at d = 3.4 nm (OPI4). Combined experimental and theoretical studies indicated that such a change stems from a tunneling-to-hopping transition, and the small but detectable length-dependence of thermopower in the long molecules originates from the gradual reduction of the tunneling contribution to the broadening of molecular orbital energy level, rather than its relative position to the Fermi level. Our work helps to bridge the gap between bulk and nanoscale thermoelectric systems.

High Seebeck Coefficient Achieved by Multinuclear Organometallic Molecular Junctions.

This paper describes the thermoelectric properties of molecular junctions incorporating multinuclear ruthenium alkynyl complexes that comprise Ru(dppe)2 [dppe = 1,2-bis(diphenylphosphino)ethane] fragments and diethylnyl aromatic bridging ligands with thioether anchors. Using the liquid metal technique, the Seebeck coefficient was examined as a function of metal nuclearity, oxidation state, and substituent on the organic ligand backbone. High Seebeck coefficients up to 73 µV/K and appreciable thermal stability with thermovoltage up to ∼3.3 mV at a heating temperature of 423 K were observed. An unusually high proximity of the highest occupied molecular orbital (HOMO) energy level to the Fermi level was revealed to give the remarkable thermoelectric performance as suggested by combined experiments and calculations. This work offers important insights into the development of molecular-scale devices for efficient thermoregulation and heat-to-electricity conversion.

Proton-Coupled Electron Transfer Aided Thermoelectric Energy Conversion and Storage.

Low-grade heat is ubiquitous in the environment and its thermoelectric conversion by the ionic conductors remains a challenge because of the low efficiency and poor sustainability. Here we demonstrate that the thermoelectric performances can be boosted by combining the Soret effect of protons and proton-coupled electron transfer (PCET) reaction of benzoquinone and hydroquinone in hydrogels. An overall enhancement of thermopower (25.9 mV K-1 ), power factor (5 mW m-1 K-2 ), figure of merit (>2.4) and continuity of power output is achieved. Moreover, an energy-storage function can be achieved by the redox couple, and a retained power output of 27.7 %, or 14 mW m-2 for more than 3 hours is obtained by the re-balance of PCET reactants in the hydrogel after the removal of the temperature gradient.

Anomalous quantum criticality in the electron-doped cuprates.

In the physics of condensed matter, quantum critical phenomena and unconventional superconductivity are two major themes. In electron-doped cuprates, the low critical field (HC2) allows one to study the putative quantum critical point (QCP) at low temperature and to understand its connection to the long-standing problem of the origin of the high-TC superconductivity. Here we present measurements of the low-temperature normal-state thermopower (S) of the electron-doped cuprate superconductor La2-x Ce x CuO4 (LCCO) from x = 0.11-0.19. We observe quantum critical [Formula: see text] versus [Formula: see text] behavior over an unexpectedly wide doping range x = 0.15-0.17 above the QCP (x = 0.14), with a slope that scales monotonically with the superconducting transition temperature (TC with H = 0). The presence of quantum criticality over a wide doping range provides a window on the criticality. The thermopower behavior also suggests that the critical fluctuations are linked with TC Above the superconductivity dome, at x = 0.19, a conventional Fermi-liquid [Formula: see text] behavior is found for [Formula: see text] 40 K.

Evidence of Lifshitz Transition in the Thermoelectric Power of Ultrahigh-Mobility Bilayer Graphene.

Resolving low-energy features in the density of states (DOS) holds the key to understanding a wide variety of rich novel phenomena in graphene-based 2D heterostructures. The Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on transport properties has been challenging because of its relatively low energy scale (∼1 meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observed additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of the Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as possible evidence of a Lifshitz transition.

Superexchange Coupling-Induced Enhancements of Thermoelectric Performance in Saturated Molecules.

To develop thermoelectric devices, it is of the utmost importance to design organic building blocks to have efficient thermopower. Whereas conjugated and aromatic molecules with intrinsic narrow band gaps are attractive candidates to achieve efficient thermoelectric properties, saturated molecules are usually avoided owing to intrinsically poor thermopower. Here we demonstrate that thermopower of saturated molecules can be enhanced by superexchange coupling. Specifically, thermoelectric properties of large-area junctions that contain self-assembled monolayers of oligo(ethylene glycol) thiolates and alkanethiolates are compared. Through large-area thermopower measurements using a liquid metal top electrode, we show that the superexchange coupling enhances the Seebeck coefficient and counterintuitively leads to an increase in the Seebeck coefficient with increasing the length in a certain conformation. The improved thermoelectric performance is attributed to the superexchange-induced enhanced ability to mediate metal wave function in junctions. Our work offers new insights for improving the thermoelectric performance of nonconjugated, saturated molecules.

Anomalous thermopower oscillations in graphene-nanowire vertical heterostructures.

Thermoelectric measurements have the potential to uncover the density of states (DOSs) of low-dimensional materials. Here, we present the anomalous thermoelectric behavior of monolayer graphene-nanowire (NW) heterostructures, showing large oscillations as a function of the doping concentration. Our devices consist of InAs NW and graphene vertical heterostructures, which are electrically isolated by thin (∼10 nm) hexagonal boron nitride (hBN) layers. In contrast to conventional thermoelectric measurements, where a heater is placed on one side of a sample, we use the InAs NW (diameter ∼50 nm) as a local heater placed in the middle of the graphene channel. We measure the thermoelectric voltage induced in graphene due to Joule heating in the NW as a function of temperature (1.5-50 K) and carrier concentration. The thermoelectric voltage in bilayer graphene (BLG)-NW heterostructures shows sign change around the Dirac point, as predicted by Mott's formula. In contrast, the thermoelectric voltage measured across monolayer graphene (MLG)-NW heterostructures shows anomalous large-amplitude oscillations around the Dirac point, not seen in the Mott response derived from the electrical conductivity measured on the same device. The anomalous oscillations are a signature of the modified DOSs in MLG by the electrostatic potential of the NW, which is much weaker in the NW-BLG devices. Thermal calculations of the heterostructure stack show that the temperature gradient is dominant in the graphene region underneath the NW, and thus sensitive to the modified DOSs resulting in anomalous oscillations in the thermoelectric voltage. Furthermore, with the application of a magnetic field, we detect modifications in the DOSs due to the formation of Landau levels in both MLG and BLG.

Thermoelectric materials taking advantage of spin entropy: lessons from chalcogenides and oxides.

The interplay between charges and spins may influence the dynamics of the carriers and determine their thermoelectric properties. In that respect, magneto-thermoelectric power MTEP, i.e. the measurements of the Seebeck coefficient S under the application of an external magnetic field, is a powerful technique to reveal the role of magnetic moments on S. This is illustrated by different transition metal chalcogenides: CuCrTiS4 and CuMnTiS4 magnetic thiospinels, which are compared with magnetic oxides, Curie-Weiss (CW) paramagnetic misfit cobaltites, ruthenates, either ferromagnetic perovskite or Pauli paramagnet quadruple perovskites, and CuGa1-x Mn x Te2 chalcopyrite telluride and Bi1.99Cr0.01Te3 in which diluted magnetism is induced by 3%-Mn and 1%-Cr substitution, respectively. In the case of a ferromagnet (below TC) and CW paramagnetic materials, the increase of magnetization at low T when a magnetic field is applied is accompanied by a decrease of the entropy of the carriers and hence S decreases. This is consistent with the lack of MTEP in the Pauli paramagnetic quadruple perovskites. Also, no significant MTEP is observed in CuGa1-x Mn x Te2 and Bi1.99Cr0.01Te3, for which Kondo-type interaction between magnetic moments and carriers prevails. In contrast, spin glass CuCrTiS4 exhibits negative MTEP like in ferromagnetic ruthenates and paramagnetic misfit cobaltites. This investigation of some chalcogenides and oxides provides key ingredients to select magnetic materials for which S benefits from spin entropy.

Chemical Bonding in Colossal Thermopower FeSb2.

FeSb2 exhibits a colossal Seebeck coefficient ( S ) and a record-breaking high thermoelectric power factor. It also has an atypical shift from diamagnetism to paramagnetism with increasing temperature, and the fine details of its electron correlation effects have been widely discussed. The extraordinary physical properties must be rooted in the nature of the chemical bonding, and indeed, the chemical bonding in this archetypical marcasite structure has been heavily debated on a theoretical basis since the 1960s. The two prevalent models for describing the bonding interactions in FeSb2 are based on either ligand-field stabilization of Fe or a network structure of Sb hosting Fe ions. However, neither model can account for the observed properties of FeSb2 . Herein, an experimental electron density study is reported, which is based on analysis of synchrotron X-ray diffraction data measured at 15 K on a minute single crystal to limit systematic errors. The analysis is supplemented with density functional theory calculations in the experimental geometry. The experimental data are at variance with both the additional single-electron Sb-Sb bond implied by the covalent model, and the large formal charge and expected d-orbital splitting advocated by the ionic model. The structure is best described as an extended covalent network in agreement with expectations based on electronegativity differences.

Electron-hole asymmetry of the topological surface states in strained HgTe.

Topological insulators are a new class of materials with an insulating bulk and topologically protected metallic surface states. Although it is widely assumed that these surface states display a Dirac-type dispersion that is symmetric above and below the Dirac point, this exact equivalence across the Fermi level has yet to be established experimentally. Here, we present a detailed transport study of the 3D topological insulator-strained HgTe that strongly challenges this prevailing viewpoint. First, we establish the existence of exclusively surface-dominated transport via the observation of an ambipolar surface quantum Hall effect and quantum oscillations in the Seebeck and Nernst effect. Second, we show that, whereas the thermopower is diffusion driven for surface electrons, both diffusion and phonon drag contributions are essential for the hole surface carriers. This distinct behavior in the thermoelectric response is explained by a strong deviation from the linear dispersion relation for the surface states, with a much flatter dispersion for holes compared with electrons. These findings show that the metallic surface states in topological insulators can exhibit both strong electron-hole asymmetry and a strong deviation from a linear dispersion but remain topologically protected.

Thermopower Modulation Clarification of the Operating Mechanism in Wide Bandgap BaSnO3 -SrSnO3 Solid-Solution Based Thin Film Transistors.

The transparent oxide semiconductor (TOS) with large bandgap (Eg ≈ 4 eV) based thin-film transistors (TFTs) showing both high carrier mobility and UV-visible transparency has attracted increasing attention as a promising component for next generation optoelectronics. Among TOSs, BaSnO3 -SrSnO3 solid-solutions (Eg = 3.5-4.2 eV) are good candidates because the single crystal shows very high mobility. However, the TFT performance has not been optimized due to the lack of fundamental knowledge especially the effective thickness (teff ) and the carrier effective mass (m*). Here, it is demonstrated that the electric field thermopower (S) modulation method addresses this problem by combining with the standard volume carrier concentration (n3D ) dependence of S measurements. By comparing the electric field accumulated sheet carrier concentration (n2D ) and n3D at same S, it is clarified that the teff (n2D /n3D ) of the conducting channel becomes thicker with increasing Sr concentration, whereas the m* becomes lighter. The former would be due to the increase of Eg and latter would be due to the enhancement of overlap population of neighboring Sn 5s orbitals. The present analyses technique is useful to experimentally clarify the teff and m*, and essentially important to realize advanced TOS-based TFTs showing both high optical transparency and high mobility.

Influence of Quantum Interference on the Thermoelectric Properties of Molecular Junctions.

Molecular junctions offer unique opportunities for controlling charge transport on the atomic scale and for studying energy conversion. For example, quantum interference effects in molecular junctions have been proposed as an avenue for highly efficient thermoelectric power conversion at room temperature. Toward this goal, we investigated the effect of quantum interference on the thermoelectric properties of molecular junctions. Specifically, we employed oligo(phenylene ethynylene) (OPE) derivatives with a para-connected central phenyl ring ( para-OPE3) and meta-connected central ring ( meta-OPE3), which both covalently bind to gold via sulfur anchoring atoms located at their ends. In agreement with predictions from ab initio modeling, our experiments on both single molecules and monolayers show that meta-OPE3 junctions, which are expected to exhibit destructive interference effects, yield a higher thermopower (with ∼20 µV/K) compared with para-OPE3 (with ∼10 µV/K). Our results show that quantum interference effects can indeed be employed to enhance the thermoelectric properties of molecular junctions.

Thermopower and Unconventional Nernst Effect in the Predicted Type-II Weyl Semimetal WTe2.

WTe2 is one of a series of recently discovered high mobility semimetals, some of whose properties are characteristic of topological Dirac or Weyl metals. One of its most interesting properties is the unsaturated giant magnetoresistance that it exhibits at low temperatures. An important question is the degree to which this property can be ascribed to a conventional semimetallic model in which a highly compensated, high mobility metal exhibits large magnetoresistance. Here, we show that the longitudinal thermopower (Seebeck effect) of semimetallic WTe2 exfoliated flakes exhibits periodic sign changes about zero with increasing magnetic field that indicates distinct electron and hole Landau levels and nearly fully compensated electron and hole carrier densities. However, inconsistent with a conventional semimetallic picture, we find a rapid enhancement of the Nernst effect at low temperatures that is nonlinear in magnetic field, which is consistent with Weyl points in proximity to the Fermi energy. Hence, we demonstrate the role played by the Weyl character of WTe2 in its transport properties.

New Approach for Large-Area Thermoelectric Junctions with a Liquid Eutectic Gallium-Indium Electrode.

A challenge in organic thermoelectrics is to relate thermoelectric performance of devices to the chemical and electronic structures of organic components inside them on a molecular scale. To this end, a reliable and reproducible platform relevant to molecular-level thermoelectric measurements is essentially needed. This paper shows a new, efficient approach for thermoelectric characterization of a large area of molecular monolayers using liquid eutectic gallium-indium (EGaIn). A cone-shaped EGaIn microelectrode permits access to noninvasive, reversible top-contact formation onto organic surfaces in ambient conditions, high yields of working devices (up to 97%), and thus statistically sufficient thermoelectric data sets (∼6000 data per sample in a few hours). We here estimated thermopowers of EGaIn (3.4 ± 0.1 µV/K) and the Ga2O3 layer (3.4 ± 0.2 µV/K) on the EGaIn conical tip and successfully validated our platform with widely studied molecules, oligophenylenethiolates. Our approach will open the door to thermoelectric large-area molecular junctions.

Field-Effect Control of Graphene-Fullerene Thermoelectric Nanodevices.

Although it was demonstrated that discrete molecular levels determine the sign and magnitude of the thermoelectric effect in single-molecule junctions, full electrostatic control of these levels has not been achieved to date. Here, we show that graphene nanogaps combined with gold microheaters serve as a testbed for studying single-molecule thermoelectricity. Reduced screening of the gate electric field compared to conventional metal electrodes allows control of the position of the dominant transport orbital by hundreds of meV. We find that the power factor of graphene-fullerene junctions can be tuned over several orders of magnitude to a value close to the theoretical limit of an isolated Breit-Wigner resonance. Furthermore, our data suggest that the power factor of an isolated level is only given by the tunnel coupling to the leads and temperature. These results open up new avenues for exploring thermoelectricity and charge transport in individual molecules and highlight the importance of level alignment and coupling to the electrodes for optimum energy conversion in organic thermoelectric materials.

Efficient Photothermoelectric Conversion in Lateral Topological Insulator Heterojunctions.

Tuning the electron and phonon transport properties of thermoelectric materials by nanostructuring has enabled improving their thermopower figure of merit. Three-dimensional topological insulators, including many bismuth chalcogenides, attract increasing attention for this purpose, as their topologically protected surface states are promising to further enhance the thermoelectric performance. While individual bismuth chalcogenide nanostructures have been studied with respect to their photothermoelectric properties, nanostructured p-n junctions of these compounds have not yet been explored. Here, we experimentally investigate the room temperature thermoelectric conversion capability of lateral heterostructures consisting of two different three-dimensional topological insulators, namely, the n-type doped Bi2Te2Se and the p-type doped Sb2Te3. Scanning photocurrent microscopy of the nanoplatelets reveals efficient thermoelectric conversion at the p-n heterojunction, exploiting hot carriers of opposite sign in the two materials. From the photocurrent data, a Seebeck coefficient difference of ΔS = 200 µV/K was extracted, in accordance with the best values reported for the corresponding bulk materials. Furthermore, it is in very good agreement with the value of ΔS = 185 µV/K obtained by DFT calculation taking into account the specific doping levels of the two nanostructured components.

Magnetic Contribution to the Seebeck Effect.

The Seebeck effect is derived within the thermodynamics of irreversible processes when the generalized forces contain the magnetic term M ∇ B . This term appears in the formalism when the magnetic field is treated as a state variable. Two subsystems are considered, one representing atomic magnetic moments, and the other, mobile charges carrying a magnetic dipole moment. A magnetic contribution to the Seebeck coefficient is identified, proportional to the logarithmic derivative of the magnetization with respect to temperature. A brief review of experimental data on magneto-thermopower in magnetic metals illustrates this magnetic effect on thermally-driven charge transport.

Unconventional aspects of electronic transport in delafossite oxides.

The electronic transport properties of the delafossite oxides [Formula: see text] are usually understood in terms of two well-separated entities, namely the triangular [Formula: see text] and ([Formula: see text] layers. Here, we review several cases among this extensive family of materials where the transport depends on the interlayer coupling and displays unconventional properties. We review the doped thermoelectrics based on [Formula: see text] and [Formula: see text], which show a high-temperature recovery of Fermi-liquid transport exponents, as well as the highly anisotropic metals [Formula: see text], [Formula: see text], and [Formula: see text], where the sheer simplicity of the Fermi surface leads to unconventional transport. We present some of the theoretical tools that have been used to investigate these transport properties and review what can and cannot be learned from the extensive set of electronic structure calculations that have been performed.