Correlating Young's Modulus with High Thermal Conductivity in Organic Conjugated Small Molecules.

Attaining elevated thermal conductivity in organic materials stands as a coveted objective, particularly within electronic packaging, thermal interface materials, and organic matrix heat exchangers. These applications have reignited interest in researching thermally conductive organic materials. The understanding of thermal transport mechanisms in these organic materials is currently constrained. This study concentrates on N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8), an organic conjugated crystal. A correlation between elevated thermal conductivity and augmented Young's modulus is substantiated through meticulous experimentation. Achievement via employing the physical vapor transport method, capitalizing on the robust C═C covalent linkages running through the organic matrix chain, bolstered by π-π stacking and noncovalent affiliations that intertwine the chains. The coexistence of these dynamic interactions, alongside the perpendicular alignment of PTCDI-C8 molecules, is confirmed through structural analysis. PTCDI-C8 thin film exhibits an out-of-plane thermal conductivity of 3.1 ± 0.1 W m-1 K-1, as determined by time-domain thermoreflectance. This outpaces conventional organic materials by an order of magnitude. Nanoindentation tests and molecular dynamics simulations elucidate how molecular orientation and intermolecular forces within PTCDI-C8 molecules drive the film's high Young's modulus, contributing to its elevated thermal conductivity. This study's progress offers theoretical guidance for designing high thermal conductivity organic materials, expanding their applications and performance potential.

Linking Interfacial Bonding and Thermal Conductivity in Molecularly-Confined Polymer-Glass Nanocomposites with Ultra-High Interfacial Density.

Thermal transport in polymer nanocomposites becomes dependent on the interfacial thermal conductance due to the ultra-high density of the internal interfaces when the polymer and filler domains are intimately mixed at the nanoscale. However, there is a lack of experimental measurements that can link the thermal conductance across the interfaces to the chemistry and bonding between the polymer molecules and the glass surface. Characterizing the thermal properties of amorphous composites are a particular challenge as their low intrinsic thermal conductivity leads to poor measurement sensitivity of the interfacial thermal conductance. To address this issue here, polymers are confined in porous organosilicates with high interfacial densities, stable composite structure, and varying surface chemistries. The thermal conductivities and fracture energies of the composites are measured with frequency dependent time-domain thermoreflectance (TDTR) and thin-film fracture testing, respectively. Effective medium theory (EMT) along with finite element analysis (FEA) is then used to uniquely extract the thermal boundary conductance (TBC) from the measured thermal conductivity of the composites. Changes in TBC are then linked to the hydrogen bonding between the polymer and organosilicate as quantified by Fourier-transform infrared (FTIR) and X-ray photoelectron (XPS) spectroscopy. This platform for analysis is a new paradigm in the experimental investigation of heat flow across constituent domains.

Thermal Conductivity Enhancement in Ion-Irradiated Hydrogenated Amorphous Carbon Films.

Amorphous solids are traditionally assumed to set the lower bound to the vibrational thermal conductivity of a material due to the high degree of structural disorder. Here, were demonstrate the ability to increase the thermal conductivity of amorphous solids through ion irradiation, in turn, altering the bonding network configuration. We report on the thermal conductivity of hydrogenated amorphous carbon implanted with C+ ions spanning fluences of 3 × 1014-8.6 × 1014 cm-2 and energies of 10-20 keV. Time-domain thermoreflectance measurements of the films' thermal conductivities reveal significant enhancement, up to a factor of 3, depending upon the preirradiation composition. Films with higher initial hydrogen content provide the greatest increase, which is complemented by an increased stiffening and densification from the irradiation process. This enhancement in vibrational transport is unique when contrasted to crystalline materials, for which ion implantation is known to produce structural degradation and significantly reduced thermal conductivities.

Uncovering Thermal and Electrical Properties of Sb2Te3/GeTe Superlattice Films.

Superlattice-like phase change memory (SL-PCM) promises lower switching current than conventional PCM based on Ge2Sb2Te5 (GST); however, a fundamental understanding of SL-PCM requires detailed characterization of the interfaces within such an SL. Here we explore the electrical and thermal transport of SLs with deposited Sb2Te3 and GeTe alternating layers of various thicknesses. We find up to an approximately four-fold reduction of the effective cross-plane thermal conductivity of the SL stack (as-deposited polycrystalline) compared with polycrystalline GST (as-deposited amorphous and later annealed) due to the thermal interface resistances within the SL. Thermal measurements with varying periods of our SLs show a signature of phonon coherence with a transition from wave-like to particle-like phonon transport, further described by our modeling. Electrical resistivity measurements of such SLs reveal strong anisotropy (∼2000×) between the in-plane and cross-plane directions due to the weakly interacting van der Waals-like gaps. This work uncovers electrothermal transport in SLs based on Sb2Te3 and GeTe for the improved design of low-power PCM.

Good Solid-State Electrolytes Have Low, Glass-Like Thermal Conductivity.

Thermal management in Li-ion batteries is critical for their safety, reliability, and performance. Understanding the thermal conductivity of the battery materials is crucial for controlling the temperature and temperature distribution in batteries. This work provides systemic quantitative measurements of the thermal conductivity of three important classes of solid electrolytes (SEs) over the temperature range 150 < T < 350 K. Studies include the oxides Li1.5 Al0.5 Ge1.5 (PO4 )3 and Li6.4 La3 Zr1.4 Ta0.6 O12 , sulfides Li2 S-P2 S5 , Li6 PS5 Cl, and Na3 PS4 , and halides Li3 InCl6 and Li3 YCl6 . Thermal conductivities of sulfide and halide SEs are in the range 0.45-0.70 W m-1  K-1 ; thermal conductivities of Li6.4 La3 Zr1.4 Ta0.6 O12 and Li1.5 Al0.5 Ge1.5 (PO4 )3 are 1.4 and 2.2 W m-1  K-1 , respectively. For most of the SEs studied in this work, the thermal conductivity increases with increasing temperature, that is, the thermal conductivity has a glass-like temperature dependence. The measured room-temperature thermal conductivities agree well with the calculated minimum thermal conductivities indicating that the phonon mean-free-paths in these SEs are close to an atomic spacing. The low, glass-like thermal conductivity of the SEs investigated is attributed to the combination of their complex crystal structures and the atomic-scale disorder induced by the materials processing methods that are typically needed to produce high ionic conductivities.

Ultralow Thermal Conductivity of Two-Dimensional Metal Halide Perovskites.

We report on the thermal conductivities of two-dimensional metal halide perovskite films measured by time domain thermoreflectance. Depending on the molecular substructure of ammonium cations and owing to the weaker interactions in the layered structures, the thermal conductivities of our two-dimensional hybrid perovskites range from 0.10 to 0.19 W m-1 K-1, which is drastically lower than that of their three-dimensional counterparts. We use molecular dynamics simulations to show that the organic component induces a reduction of the stiffness and sound velocities along with giving rise to vibrational modes in the 5-15 THz range that are absent in the three-dimensional counterparts. By systematically studying eight different two-dimensional hybrid perovskites, we show that the thermal conductivities of our hybrid films do not depend on the thicknesses of the organic layers and instead are highly dependent on the relative orientation of the organic chains sandwiched between the inorganic constituents.

Spatial and Temporal Nanoscale Plasmonic Heating Quantified by Thermoreflectance.

The field of thermoplasmonics has thrived in the past decades because it uniquely provides remotely controllable nanometer-scale heat sources that have augmented numerous technologies. Despite the extensive studies on steady-state plasmonic heating, the dynamic behavior of the plasmonic heaters in the nanosecond regime has remained largely unexplored, yet such a time scale is indeed essential for a broad range of applications such as photocatalysis, optical modulators, and detectors. Here, we use two distinct techniques based on the temperature-dependent surface reflectivity of materials, optical thermoreflectance imaging (OTI) and time-domain thermoreflectance (TDTR), to comprehensively investigate plasmonic heating in both spatial and temporal domains. Specifically, OTI enables the rapid visualization of plasmonic heating with sub-micron resolution, outperforming a standard thermal camera, and allows us to establish the connection between the optical absorptance and heating efficiency as well as to analyze plasmonic heating dynamics on the millisecond scale. Using the TDTR technique, we, for the first time, study the optical resonance-dependent heat-transfer dynamics of a nanometer-scale plasmonic structure in the nanosecond regime and use a detailed computational model to extract the impulse response and thermal interface conductance of a multilayer plasmonic structure. The study reveals a quantitative relationship between the dimensions of the nanopatterned structure and its spatiotemporal thermal response to the light pulse excitation, a thermoplasmonic effect resulting from the spatial distribution of the absorbed electromagnetic energy. We also conclude that the two thermoreflectance techniques provide necessary feedback to nanoscale thermoplasmonic heat management, for which optimization in either heating power or temperature decay speed is needed.

Quasi-Ballistic Thermal Transport Across MoS2 Thin Films.

Layered two-dimensional (2D) materials have highly anisotropic thermal properties between the in-plane and cross-plane directions. Conventionally, it is thought that cross-plane thermal conductivities (κ z) are low, and therefore c-axis phonon mean free paths (MFPs) are small. Here, we measure κ z across MoS2 films of varying thickness (20-240 nm) and uncover evidence of very long c-axis phonon MFPs at room temperature in these layered semiconductors. Experimental data obtained using time-domain thermoreflectance (TDTR) are in good agreement with first-principles density functional theory (DFT). These calculations suggest that ∼50% of the heat is carried by phonons with MFP > 200 nm, exceeding kinetic theory estimates by nearly 2 orders of magnitude. Because of quasi-ballistic effects, the κ z of nanometer-thin films of MoS2 scales with their thickness and the volumetric thermal resistance asymptotes to a nonzero value, ∼10 m2 K GW-1. This contributes as much as 30% to the total thermal resistance of a 20 nm thick film, the rest being limited by thermal interface resistance with the SiO2 substrate and top-side aluminum transducer. These findings are essential for understanding heat flow across nanometer-thin films of MoS2 for optoelectronic and thermoelectric applications.

Direct Visualization of Thermal Conductivity Suppression Due to Enhanced Phonon Scattering Near Individual Grain Boundaries.

Understanding the impact of lattice imperfections on nanoscale thermal transport is crucial for diverse applications ranging from thermal management to energy conversion. Grain boundaries (GBs) are ubiquitous defects in polycrystalline materials, which scatter phonons and reduce thermal conductivity (κ). Historically, their impact on heat conduction has been studied indirectly through spatially averaged measurements, that provide little information about phonon transport near a single GB. Here, using spatially resolved time-domain thermoreflectance (TDTR) measurements in combination with electron backscatter diffraction (EBSD), we make localized measurements of κ within few µm of individual GBs in boron-doped polycrystalline diamond. We observe strongly suppressed thermal transport near GBs, a reduction in κ from ∼1000 W m-1 K-1 at the center of large grains to ∼400 W m-1 K-1 in the immediate vicinity of GBs. Furthermore, we show that this reduction in κ is measured up to ∼10 µm away from a GB. A theoretical model is proposed that captures the local reduction in phonon mean-free-paths due to strongly diffuse phonon scattering at the disordered grain boundaries. Our results provide a new framework for understanding phonon-defect interactions in nanomaterials, with implications for the use of high-κ polycrystalline materials as heat sinks in electronics thermal management.

Thermal Properties and Phonon Spectral Characterization of Synthetic Boron Phosphide for High Thermal Conductivity Applications.

Heat dissipation is an increasingly critical technological challenge in modern electronics and photonics as devices continue to shrink to the nanoscale. To address this challenge, high thermal conductivity materials that can efficiently dissipate heat from hot spots and improve device performance are urgently needed. Boron phosphide is a unique high thermal conductivity and refractory material with exceptional chemical inertness, hardness, and high thermal stability, which holds high promises for many practical applications. So far, however, challenges with boron phosphide synthesis and characterization have hampered the understanding of its fundamental properties and potential applications. Here, we describe a systematic thermal transport study based on a synergistic synthesis-experimental-modeling approach: we have chemically synthesized high-quality boron phosphide single crystals and measured their thermal conductivity as a record-high 460 W/mK at room temperature. Through nanoscale ballistic transport, we have, for the first time, mapped the phonon spectra of boron phosphide and experimentally measured its phonon mean free-path spectra with consideration of both natural and isotope-pure abundances. We have also measured the temperature- and size-dependent thermal conductivity and performed corresponding calculations by solving the three-dimensional and spectral-dependent phonon Boltzmann transport equation using the variance-reduced Monte Carlo method. The experimental results are in good agreement with that predicted by multiscale simulations and density functional theory, which together quantify the heat conduction through the phonon mode dependent scattering process. Our finding underscores the promise of boron phosphide as a high thermal conductivity material for a wide range of applications, including thermal management and energy regulation, and provides a detailed, microscopic-level understanding of the phonon spectra and thermal transport mechanisms of boron phosphide. The present study paves the way toward the establishment of a new framework, based on the phonon spectra-material structure relationship, for the rational design of high thermal conductivity materials and nano- to multiscale devices.

Room-temperature voltage tunable phonon thermal conductivity via reconfigurable interfaces in ferroelectric thin films.

Dynamic control of thermal transport in solid-state systems is a transformative capability with the promise to propel technologies including phononic logic, thermal management, and energy harvesting. A solid-state solution to rapidly manipulate phonons has escaped the scientific community. We demonstrate active and reversible tuning of thermal conductivity by manipulating the nanoscale ferroelastic domain structure of a Pb(Zr0.3Ti0.7)O3 film with applied electric fields. With subsecond response times, the room-temperature thermal conductivity was modulated by 11%.

Anisotropy Reversal of Thermal Conductivity in Silicon Nanowire Networks Driven by Quasi-Ballistic Phonon Transport.

Nanostructured semiconductors promise functional thermal management for microelectronics and thermoelectrics through a rich design capability. However, experimental studies on anisotropic in-plane thermal conduction remain limited, despite the demand for directional heat dissipation. Here, inspired by an oriental wave pattern, a periodic network of bent wires, we investigate anisotropic in-plane thermal conduction in nanoscale silicon phononic crystals with the thermally dead volume. We observed the anisotropy reversal of the material thermal conductivity from 1.2 at 300 K to 0.8 at 4 K, with the reversal temperature of 80 K mediated by the transition from a diffusive to a quasi-ballistic regime. Our Monte Carlo simulations revealed that the backflow of the directional phonons induces the anisotropy reversal, showing that the quasi-ballistic phonon transport introduces preferential thermal conduction channels with anomalous temperature dependence. Accordingly, the anisotropy of the effective thermal conductivity varied from 2.7 to 5.0 in the range of 4-300 K, indicating an anisotropic heat manipulation capability. Our findings demonstrate that the design of nanowire networks enables the directional thermal management of electronic devices.

Enhanced Thermal Boundary Conductance across GaN/SiC Interfaces with AlN Transition Layers.

Heat dissipation plays a crucial role in the performance and reliability of high-power GaN-based electronics. While AlN transition layers are commonly employed in the heteroepitaxial growth of GaN-on-SiC substrates, concerns have been raised about their impact on thermal transport across GaN/SiC interfaces. In this study, we present experimental measurements of the thermal boundary conductance (TBC) across GaN/SiC interfaces with varying thicknesses of the AlN transition layer (ranging from 0 to 73 nm) at different temperatures. Our findings reveal that the addition of an AlN transition layer leads to a notable increase in the TBC of the GaN/SiC interface, particularly at elevated temperatures. Structural characterization techniques are employed to understand the influence of the AlN transition layer on the crystalline quality of the GaN layer and its potential effects on interfacial thermal transport. To gain further insights into the trend of TBC, we conduct molecular dynamics simulations using high-fidelity deep learning-based interatomic potentials, which reproduce the experimentally observed enhancement in TBC even for atomically perfect interfaces. These results suggest that the enhanced TBC facilitated by the AlN intermediate layer could result from a combination of improved crystalline quality at the interface and the "phonon bridge" effect provided by AlN that enhances the overlap between the vibrational spectra of GaN and SiC.

Regulated Thermal Boundary Conductance between Copper and Diamond through Nanoscale Interfacial Rough Structures.

Interfacial structure optimization is important to enhance the thermal boundary conductance (TBC) as well as the overall performance of thermal conductive composites. In this work, the effect of interfacial roughness on the TBC between copper and diamond is investigated with molecular dynamics (MD) simulations and time-domain thermoreflectance (TDTR) experiments. It is found from MD simulations that the thermal transport efficiency across a rough interface is higher, and the TBC can be improved 5.5 times to 133 MW/m2·K compared with that of the flat interface. Also, the TBC is only dominated by the actual contact area at the interface for larger roughness cases; thus, we conclude that the phonon scattering probability increases with the increase of roughness and becomes stable gradually. Finally, the TBC of the copper/diamond interface with different roughness is characterized by TDTR experiments, and the results also confirm the trend of MD simulations. This study demonstrates the feasibility of the roughness modification for interfacial thermal management from both theoretical analysis and experimental measurements and provides a new idea for enhancing the thermal conductivity of composites.

Quantifying Interfacial Bonding Using Thermal Boundary Conductance at Cubic Boron Nitride/Copper Interfaces with a Large Mismatch of Phonon Density of States.

Interfacial bonding that directly influences the functional and mechanical properties of metal/nonmetal composites is commonly estimated by destructive pull-off measurements such as scratch tests, etc. However, these destructive methods may not be applicable under certain extreme environments; it is urgently necessary to develop a nondestructive quantification technique to determine the composite's performance. In this work, the time-domain thermoreflectance (TDTR) technique is applied to study the inter-relationship between interfacial bonding and interface characteristics through thermal boundary conductance (G) measurements. We think that interfacial phonon transmission capability plays a decisive role in influencing interfacial heat transport, especially for scenarios with a large mismatch of phonon density of states (PDOS). Moreover, we demonstrated this method at (100) and (111) cubic boron nitride/copper (c-BN/Cu) interfaces by both experimental and simulation efforts. The results show that the TDTR-measured G of the (100) c-BN/Cu interface (30 MW/m2·K) is about 20% higher than that of the (111) c-BN/Cu (25 MW/m2·K), which is ascribed to that higher interfacial bonding of the (100) c-BN/Cu endows it with better interfacial phonon transmission capability. In addition, detailed comparison of 10+ other metal/nonmetal interfaces exhibits similar positive relationship for interfaces with a large PDOS mismatch but negative relationship for interfaces with a small PDOS mismatch. The latter one is attributed to that extra inelastic phonon scattering and electron transport channels abnormally promoting interfacial heat transport. This work may provide some insights into quantitatively establishing inter-relationship between interfacial bonding and interface characteristics.

Efficient pump-probe sampling with a single-cavity dual-comb laser: Application in ultrafast photoacoustics.

Ultrafast pump-probe measurements are used to characterize various samples, such as biological cells, bulk, and thin-film structures. However, typical implementations of the pump-probe apparatus are either slow or complex and costly hindering wide deployment. Here we combine a single-cavity dual-comb laser with a simple experimental setup to obtain pump-probe measurements with ultra-high sensitivity, fast acquisition, and high timing precision over long optical delay scan ranges of 12.5 ns that would correspond to a mechanical delay of about 3.75 m. We employ digital signal balancing to obtain shot-noise-limited detection compatible with pump-probe microscopy deployment. Here we demonstrate ultrafast photoacoustics for thin-film sample characterization. We measured a tungsten layer thickness of (700 ± 4) Å with shot-noise-limited detection. Such single-cavity dual-comb lasers can be used for any pump-probe measurements and are especially well-suited for ultrafast photoacoustic studies such as involving ultrasonic echoes, Brillouin oscillations, surface acoustic waves and thermal dynamics.

Interfacial Thermal Conductance between Cu and Diamond with Interconnected W-W2C Interlayer.

Manipulating the interfacial structure is vital to enhancing the interfacial thermal conductance (G) in Cu/diamond composites for promising thermal management applications. An interconnected interlayer is frequently observed in Cu/diamond composites; however, the G between Cu and diamond with an interconnected interlayer has not been addressed so far and thus is attracting extensive attention in the field. In this study, we designed three kinds of interlayers between a Cu film and a diamond substrate by magnetron sputtering coupled with heat treatment, including a W interlayer, an interconnected W-W2C interlayer, and a W2C interlayer, to comparatively elucidate the relationship between the interfacial structure and the interfacial thermal conductance. For the first time, we experimentally measured the G between Cu and diamond with an interconnected interlayer by a time-domain thermoreflectance technique. The Cu/W-W2C/diamond structure exhibits an intermediate G value of 25.8 MW/m2 K, higher than the 19.9 MW/m2 K value for the Cu/W2C/diamond structure and lower than the 29.4 MW/m2 K value for the Cu/W/diamond structure. The molecular dynamics simulations show that the G of the individual W2C/diamond interface is much higher than those of the individual Cu/diamond and W/diamond interfaces and W2C could reduce the vibrational mismatch between Cu and diamond; however, the G of the Cu/W2C/diamond structure is reduced by the lower thermal conductivity of W2C. This study provides insights into the relationship between the interconnected interfacial structure and the G between Cu and diamond and offers guidance for interface design to improve the thermal conductivity in Cu/diamond composites.

Properties for Thermally Conductive Interfaces with Wide Band Gap Materials.

The goal of this study is to determine how bulk vibrational properties and interfacial structure affect thermal transport at interfaces in wide band gap semiconductor systems. Time-domain thermoreflectance measurements of thermal conductance G are reported for interfaces between nitride metals and group IV (diamond, SiC, Si, and Ge) and group III-V (AlN, GaN, and cubic BN) materials. Group IV and group III-V semiconductors have systematic differences in vibrational properties. Similarly, HfN and TiN are also vibrationally distinct from each other. Therefore, comparing G of interfaces formed from these materials provides a systematic test of how vibrational similarity between two materials affects interfacial transport. For HfN interfaces, we observe conductances between 140 and 300 MW m-2 K-1, whereas conductances between 200 and 800 MW m-2 K-1 are observed for TiN interfaces. TiN forms exceptionally conductive interfaces with GaN, AlN, and diamond, that is, G > 400 MW m-2 K-1. Surprisingly, interfaces formed between vibrationally similar and dissimilar materials are similarly conductive. Thus, vibrational similarity between two materials is not a necessary requirement for high G. Instead, the time-domain thermoreflectance experiment (TDTR) data, an analysis of bulk vibrational properties, and transmission electron microscopy (TEM) suggest that G depends on two other material properties, namely, the bulk phonon properties of the vibrationally softer of the two materials and the interfacial structure. To determine how G depends on interfacial structure, TDTR and TEM measurements were conducted on a series of TiN/AlN samples prepared in different ways. Interfacial disorder at a TiN/AlN interface adds a thermal resistance equivalent to ∼1 nm of amorphous material. Our findings improve fundamental understanding of what material properties are most important for thermally conductive interfaces. They also provide benchmarks for the thermal conductance of interfaces with wide band gap semiconductors.

Role of vibrational properties and electron-phonon coupling on thermal transport across metal-dielectric interfaces with ultrathin metallic interlayers.

We systematically analyze the influence of 5 nm thick metal interlayers inserted at the interface of several sets of different metal-dielectric systems to determine the parameters that most influence interface transport. Our results show that despite the similar Debye temperatures of Al2O3and AlN substrates, the thermal boundary conductance measured for the Au/Al2O3system with Ni and Cr interlayers is ∼2× and >3× higher than the corresponding Au/AlN system, respectively. We also show that for crystalline SiO2(quartz) and Al2O3substrates having highly dissimilar Debye temperature, the measured thermal boundary conductance between Al/Al2O3and Al/SiO2are similar in the presence of Ni and Cr interlayers. We suggest that comparing the maximum phonon frequency of the acoustic branches is a better parameter than the Debye temperature to predict the change in the thermal boundary conductance. We show that the electron-phonon coupling of the metallic interlayers also alters the heat transport pathways in a metal-dielectric system in a nontrivial way. Typically, interlayers with large electron-phonon coupling strength can increase the thermal boundary conductance by dragging electrons and phonons into equilibrium quickly. However, our results show that a Ta interlayer, having a high electron-phonon coupling, shows a low thermal boundary conductance due to the poor phonon frequency overlap with the top Al layer. Our experimental work can be interpreted in the context of diffuse mismatch theory and can guide the selection of materials for thermal interface engineering.

Thermal Characterization of Metal-Oxide Interfaces Using Time-Domain Thermoreflectance with Nanograting Transducers.

Metal-oxide thermal boundary conductance (TBC) strongly influences the temperature rise in nanostructured systems, such as dense interconnects, when its value is comparable to the thermal conductance of the amorphous dielectric oxide. However, the thermal characterization of metal-amorphous oxide TBC is often hampered by the measurement insensitivity of techniques such as time-domain thermoreflectance (TDTR). Here, we use metal nanograting structures as opto-thermal transducers in TDTR to measure the TBC of metal-oxide interfaces. Combined with an ultrafast pump-probe laser measurement approach, the nanopatterned structures amplify the contribution of the thermal boundary resistance (TBR), the inverse of TBC, over the thermal resistance of the adjacent material, thereby enhancing measurement sensitivity. For demonstration purposes, we report the TBC between Al and SiO2 films. We then compare the impact of Al grating dimensions on the measured TBC values, sensitivities, and uncertainties. The grating periods L used in this study range from 150 to 300 nm, and the bridge widths w range from 72 to 205 nm. With the narrowest grating transducers (72 nm), the TBC of Al-SiO2 interfaces is measured to be 159-48+61 MW m-2 K-1, with the experimental sensitivity being 5× higher than that of a blanket Al film. This improvement is attributed to the reduced contribution of the SiO2 film thermal resistance to the temperature signal from TDTR response. The nanograting measurement approach described here is promising for the thermal characterization of a variety of nanostructured metal-amorphous passivation systems and interfaces common in semiconductor technology.