Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas.
Phys Rev Lett
; 86(6): 1122-5, 2001 Feb 05.
Article
em En
| MEDLINE
| ID: mdl-11178025
ABSTRACT
We present the first study of ultrafast hole dynamics after resonant intersubband excitation in a quasi-two-dimensional semiconductor. p-type Si0.5Ge 0.5/Si multiple quantum wells are studied in pump-probe experiments with 150 fs midinfrared pulses. Intersubband scattering from the second heavy-hole back to the first heavy-hole subband occurs with a time constant of 250 fs, followed by intrasubband carrier heating within 1 ps. Such processes give rise to a strong reshaping of the intersubband absorption line, which is accounted for by calculations of the subband structure, optical spectra, and hole-phonon scattering rates.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2001
Tipo de documento:
Article
País de afiliação:
Alemanha