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Transport model of controlled molecular rectifier showing unusual negative differential resistance effect.
Granhen, Ewerton Ramos; Reis, Marcos Allan Leite; Souza, Fabrício M; Del Nero, Jordan.
Afiliação
  • Granhen ER; Pós-graduação em Engenharia Elétrica, Universidade Federal do Pará, 66075-900, Belém-PA, Brazil.
J Nanosci Nanotechnol ; 10(12): 8112-7, 2010 Dec.
Article em En | MEDLINE | ID: mdl-21121303
We investigate theoretically the charge accumulated Q in a three-terminal molecular device in the presence of an external electric field. Our approach is based on ab initio Hartree-Fock and density functional theory methodology contained in Gaussian package. Our main finding is a negative differential resistance (NDR) in the charge Q as a function of an external electric field. To explain this NDR effect we apply a phenomenological capacitive model based on a quite general system composed of many localized levels (that can be LUMOs of a molecule) coupled to source and drain. The capacitance accounts for charging effects that can result in Coulomb blockade (CB) in the transport. We show that this CB effect gives rise to a NDR for a suitable set of phenomenological parameters, like tunneling rates and charging energies. The NDR profile obtained in both ab initio and phenomenological methodologies are in close agreement.
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Base de dados: MEDLINE Tipo de estudo: Prognostic_studies / Qualitative_research Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Brasil
Buscar no Google
Base de dados: MEDLINE Tipo de estudo: Prognostic_studies / Qualitative_research Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Brasil