Phosphorus δ-doped silicon: mixed-atom pseudopotentials and dopant disorder effects.
Nanotechnology
; 22(6): 065701, 2011 Feb 11.
Article
em En
| MEDLINE
| ID: mdl-21212477
ABSTRACT
Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus δ-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.
Texto completo:
1
Base de dados:
MEDLINE
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2011
Tipo de documento:
Article
País de afiliação:
Austrália