Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices. | Nanotechnology;23(26): 265202, 2012 Jul 05. | MEDLINE

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Correlation between evolution of resistive switching and oxygen vacancy configuration in La0.5Ca0.5MnO3 based memristive devices.

Wang, Zhi-Hong; Yang, Yang; Gu, Lin; Habermeier, H-U; Yu, Ri-Cheng; Zhao, Tong-Yun; Sun, Ji-Rong; Shen, Bao-Gen.

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Wang ZH; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China. z.wang@iphy.ac.cn

Nanotechnology ; 23(26): 265202, 2012 Jul 05.

Article em En | MEDLINE | ID: mdl-22700688

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2012 Tipo de documento: Article

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2012 Tipo de documento: Article