The bottom-up growth of edge specific graphene nanoribbons.
Nano Lett
; 14(11): 6080-6, 2014 Nov 12.
Article
em En
| MEDLINE
| ID: mdl-25254434
ABSTRACT
The discovery of ballistic transport in graphene grown on SiC(0001) sidewall trenches has sparked an intense effort to uncover the origin of this exceptional conductivity. How a ribbon's edge termination, width, and topography influence its transport is not yet understood. This work presents the first structural and electronic comparison of sidewall graphene grown with different edge terminations. We show that armchair and zigzag terminated ribbons, grown from SiC, have very different topographies and interact differently with the substrate, properties that are critical to device architecture in sidewall ribbon electronics.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2014
Tipo de documento:
Article
País de afiliação:
Estados Unidos