Optoelectronic memory using two-dimensional materials.
Nano Lett
; 15(1): 259-65, 2015 Jan 14.
Article
em En
| MEDLINE
| ID: mdl-25517502
ABSTRACT
An atomically thin optoelectronic memory array for image sensing is demonstrated with layered CuIn7Se11 and extended to InSe and MoS2 atomic layers. Photogenerated charge carriers are trapped and subsequently retrieved from the potential well formed by gating a 2D material with Schottky barriers. The atomically thin layered optoelectronic memory can accumulate photon-generated charges during light exposure, and the charges can be read out later for data processing and permanent storage. An array of atomically thin image memory pixels was built to illustrate the potential of fabricating large-scale 2D material-based image sensors for image capture and storage.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2015
Tipo de documento:
Article
País de afiliação:
Estados Unidos