How important is the {103} plane of stable Ge2 Sb2 Te5 for phase-change memory?

Zhang, W; Zheng, W T; Kim, J-G; Cui, X Q; Li, L; Qi, J G; Kim, Y-J; Song, S A

Zhang, W; Zheng, W T; Kim, J-G; Cui, X Q; Li, L; Qi, J G; Kim, Y-J; Song, S A.

Afiliação

Zhang W; Department of Materials Science, and Key Laboratory of Mobile Materials MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun, China.
Zheng WT; Computational and Analytical Science Center, Samsung Advanced Institute of Technology, Yongin, South Korea.
Kim JG; Department of Materials Science, and Key Laboratory of Mobile Materials MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun, China.
Cui XQ; Korea Basic Science Institute, Daejeon, South Korea.
Li L; Department of Materials Science, and Key Laboratory of Mobile Materials MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun, China.
Qi JG; School of Electronic and Information Engineering, Changchun University, Changchun, China.
Kim YJ; School of Material Science & Engineering, Liaoning University of Technology, Jinzhou, China.
Song SA; Korea Basic Science Institute, Daejeon, South Korea.

J Microsc ; 259(1): 10-5, 2015 Jul.

Article em En | MEDLINE | ID: mdl-25809085

Palavras-chave

Ge2Sb2Te5; face-centered-cubic (FCC); hexagonal; phase-change memory; shape memory

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Microsc Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Microsc Ano de publicação: 2015 Tipo de documento: Article País de afiliação: China