Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging.

Li, Z J; Danilewsky, A N; Helfen, L; Mikulik, P; Haenschke, D; Wittge, J; Allen, D; McNally, P; Baumbach, T

Li, Z J; Danilewsky, A N; Helfen, L; Mikulik, P; Haenschke, D; Wittge, J; Allen, D; McNally, P; Baumbach, T.

Afiliação

Li ZJ; Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
Danilewsky AN; Crystallography, University of Freiburg, Germany.
Helfen L; Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
Mikulik P; Institute of Condensed Matter Physics, Masaryk University, Czech Republic.
Haenschke D; Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.
Wittge J; Crystallography, University of Freiburg, Germany.
Allen D; School of Electronic Engineering, Dublin City University, Ireland.
McNally P; School of Electronic Engineering, Dublin City University, Ireland.
Baumbach T; Institute for Photon Science and Synchrotron Radiation, Karlsruhe Institute of Technology, Germany.

J Synchrotron Radiat ; 22(4): 1083-90, 2015 Jul.

Article em En | MEDLINE | ID: mdl-26134815

Palavras-chave

XMDI; defect; nanoindentation; silicon; strain

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Synchrotron Radiat Assunto da revista: RADIOLOGIA Ano de publicação: 2015 Tipo de documento: Article País de afiliação: Alemanha

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