Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.
Opt Express
; 23(12): 15935-43, 2015 Jun 15.
Article
em En
| MEDLINE
| ID: mdl-26193570
ABSTRACT
Three green light emitting InGaN/GaN multiple quantum well (MQW) structures with different In composition grown by metal-organic chemical vapor deposition are investigated by the X-ray diffraction and the temperature-dependent photoluminescence (PL) measurements. It is found that when the In composition increases in the InGaN/GaN MQWs, the PL spectral bandwidth may anomalously decrease with increasing temperature. The reduction of PL spectral bandwidth may be ascribed to the enhanced non-radiative recombination process which may lower the light emission efficiency of the localized luminescent centers with shallow localization energy in the high-In-content InGaN quantum wells and also cause a reduction of integrated PL intensity.
Texto completo:
1
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2015
Tipo de documento:
Article