Vertically Conductive Single-Crystal SiC-Based Bragg Reflector Grown on Si Wafer.
Sci Rep
; 5: 17026, 2015 Nov 25.
Article
em En
| MEDLINE
| ID: mdl-26601894
ABSTRACT
Single-crystal silicon carbide (SiC) thin-films on silicon (Si) were used for the fabrication and characterization of electrically conductive distributed Bragg reflectors (DBRs) on 100 mm Si wafers. The DBRs, each composed of 3 alternating layers of SiC and Al(Ga)N grown on Si substrates, show high wafer uniformity with a typical maximum reflectance of 54% in the blue spectrum and a stopband (at 80% maximum reflectance) as large as 100 nm. Furthermore, high vertical electrical conduction is also demonstrated resulting to a density of current exceeding 70 A/cm(2) above 1.5 V. Such SiC/III-N DBRs with high thermal and electrical conductivities could be used as pseudo-substrate to enhance the efficiency of SiC-based and GaN-based optoelectronic devices on large Si wafers.
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MEDLINE
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En
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Sci Rep
Ano de publicação:
2015
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Article
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Austrália