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Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties.
dos Santos, Renato B; Mota, F de Brito; Rivelino, R; Kakanakova-Georgieva, A; Gueorguiev, G K.
Afiliação
  • dos Santos RB; Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil. Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden.
Nanotechnology ; 27(14): 145601, 2016 Apr 08.
Article em En | MEDLINE | ID: mdl-26902955
ABSTRACT
Graphite-like hexagonal AlN (h-AlN) multilayers have been experimentally manifested and theoretically modeled. The development of any functional electronics applications of h-AlN would most certainly require its integration with other layered materials, particularly graphene. Here, by employing vdW-corrected density functional theory calculations, we investigate structure, interaction energy, and electronic properties of van der Waals stacking sequences of few-layer h-AlN with graphene. We find that the presence of a template such as graphene induces enough interlayer charge separation in h-AlN, favoring a graphite-like stacking formation. We also find that the interface dipole, calculated per unit cell of the stacks, tends to increase with the number of stacked layers of h-AlN and graphene.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Suécia

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Suécia