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Four-state memory based on a giant and non-volatile converse magnetoelectric effect in FeAl/PIN-PMN-PT structure.
Wei, Yanping; Gao, Cunxu; Chen, Zhendong; Xi, Shibo; Shao, Weixia; Zhang, Peng; Chen, Guilin; Li, Jiangong.
Afiliação
  • Wei Y; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
  • Gao C; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
  • Chen Z; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
  • Xi S; Institute of Chemical &Engineering Sciences, Agency for Science, Technology and Research, Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore.
  • Shao W; Institute of Chemical &Engineering Sciences, Agency for Science, Technology and Research, Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, 117603, Singapore.
  • Zhang P; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
  • Chen G; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
  • Li J; Key Lab for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou, 730000, China.
Sci Rep ; 6: 30002, 2016 07 15.
Article em En | MEDLINE | ID: mdl-27417902

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article País de afiliação: China