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High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ-Si-Si to Au Coordination.
Kim, Nathaniel T; Li, Haixing; Venkataraman, Latha; Leighton, James L.
Afiliação
  • Kim NT; Department of Chemistry, Columbia University , New York, New York 10027, United States.
  • Li H; Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
  • Venkataraman L; Department of Chemistry, Columbia University , New York, New York 10027, United States.
  • Leighton JL; Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
J Am Chem Soc ; 138(36): 11505-8, 2016 09 14.
Article em En | MEDLINE | ID: mdl-27563932
ABSTRACT
A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si σ bond and the other electrode.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: J Am Chem Soc Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos