Controlling the defects and transition layer in SiO<sub>2</sub> films grown on 4H-SiC via direct plasma-assisted oxidation.

Controlling the defects and transition layer in SiO₂ films grown on 4H-SiC via direct plasma-assisted oxidation.

Kim, Dae-Kyoung; Jeong, Kwang-Sik; Kang, Yu-Seon; Kang, Hang-Kyu; Cho, Sang W; Kim, Sang-Ok; Suh, Dongchan; Kim, Sunjung; Cho, Mann-Ho.

Afiliação

Kim DK; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea.
Jeong KS; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea.
Kang YS; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea.
Kang HK; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea.
Cho SW; Department of Physics, Yonsei University, Wonju 220-710, Korea.
Kim SO; Department of Biomedical Engineering, Seonam University, Namwon 55724, Korea.
Suh D; Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Korea.
Kim S; Process Development Team, Semiconductor R&D Center, SAMSUNG, Hwaseong-si 18448, Korea.
Cho MH; Institute of Physics and Applied Physics, Yonsei University, Seoul, 120-749 Korea.

Sci Rep ; 6: 34945, 2016 10 10.

Article em En | MEDLINE | ID: mdl-27721493

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2016 Tipo de documento: Article