Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots.
Nanotechnology
; 27(46): 465701, 2016 Nov 18.
Article
em En
| MEDLINE
| ID: mdl-27749272
ABSTRACT
The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2016
Tipo de documento:
Article