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Interface Engineering of Domain Structures in BiFeO3 Thin Films.
Chen, Deyang; Chen, Zuhuang; He, Qian; Clarkson, James D; Serrao, Claudy R; Yadav, Ajay K; Nowakowski, Mark E; Fan, Zhen; You, Long; Gao, Xingsen; Zeng, Dechang; Chen, Lang; Borisevich, Albina Y; Salahuddin, Sayeef; Liu, Jun-Ming; Bokor, Jeffrey.
Afiliação
  • Chen D; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
  • Chen Z; Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
  • He Q; School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China.
  • Clarkson JD; Department of Physics, University of California Berkeley , Berkeley, California 94720, United States.
  • Serrao CR; Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
  • Yadav AK; Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
  • Nowakowski ME; Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
  • Fan Z; Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
  • You L; Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
  • Gao X; Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
  • Zeng D; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
  • Chen L; School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
  • Borisevich AY; Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
  • Salahuddin S; School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China.
  • Liu JM; Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China.
  • Bokor J; Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
Nano Lett ; 17(1): 486-493, 2017 01 11.
Article em En | MEDLINE | ID: mdl-27935317
ABSTRACT
A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3 films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3 system originates from 109° domain walls. Our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO3 system.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: China