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Temperature effects on an InGaP (GaInP) 55Fe X-ray photovoltaic cell.
Butera, S; Whitaker, M D C; Krysa, A B; Barnett, A M.
Afiliação
  • Butera S; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton, BN1 9QT, UK. S.Butera@sussex.ac.uk.
  • Whitaker MDC; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton, BN1 9QT, UK.
  • Krysa AB; EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK.
  • Barnett AM; Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Brighton, BN1 9QT, UK.
Sci Rep ; 7(1): 4981, 2017 07 10.
Article em En | MEDLINE | ID: mdl-28694470
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Reino Unido
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Reino Unido