Lattice-Matched Epitaxial Graphene Grown on Boron Nitride.
Nano Lett
; 18(1): 498-504, 2018 01 10.
Article
em En
| MEDLINE
| ID: mdl-29211487
Lattice-matched graphene on hexagonal boron nitride is expected to lead to the formation of a band gap but requires the formation of highly strained material and has not hitherto been realized. We demonstrate that aligned, lattice-matched graphene can be grown by molecular beam epitaxy using substrate temperatures in the range 1600-1710 °C and coexists with a topologically modified moiré pattern with regions of strained graphene which have giant moiré periods up to â¼80 nm. Raman spectra reveal narrow red-shifted peaks due to isotropic strain, while the giant moiré patterns result in complex splitting of Raman peaks due to strain variations across the moiré unit cell. The lattice-matched graphene has a lower conductance than both the Frenkel-Kontorova-type domain walls and also the topological defects where they terminate. We relate these results to theoretical models of band gap formation in graphene/boron nitride heterostructures.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
Reino Unido