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Skin electronics from scalable fabrication of an intrinsically stretchable transistor array.
Wang, Sihong; Xu, Jie; Wang, Weichen; Wang, Ging-Ji Nathan; Rastak, Reza; Molina-Lopez, Francisco; Chung, Jong Won; Niu, Simiao; Feig, Vivian R; Lopez, Jeffery; Lei, Ting; Kwon, Soon-Ki; Kim, Yeongin; Foudeh, Amir M; Ehrlich, Anatol; Gasperini, Andrea; Yun, Youngjun; Murmann, Boris; Tok, Jeffery B-H; Bao, Zhenan.
Afiliação
  • Wang S; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Xu J; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang W; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Wang GN; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Rastak R; Department of Civil and Environmental Engineering, Stanford University, Stanford, California 94305, USA.
  • Molina-Lopez F; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Chung JW; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Niu S; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Republic of Korea.
  • Feig VR; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Lopez J; Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA.
  • Lei T; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Kwon SK; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Kim Y; Department of Materials Engineering and Convergence Technology and ERI, Gyeongsang National University, Jinju, 660-701, Republic of Korea.
  • Foudeh AM; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
  • Ehrlich A; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Gasperini A; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Yun Y; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Murmann B; Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
  • Tok JB; Samsung Advanced Institute of Technology, Yeongtong-gu, Suwon-si, Gyeonggi-do 443-803, Republic of Korea.
  • Bao Z; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA.
Nature ; 555(7694): 83-88, 2018 03 01.
Article em En | MEDLINE | ID: mdl-29466334
ABSTRACT
Skin-like electronics that can adhere seamlessly to human skin or within the body are highly desirable for applications such as health monitoring, medical treatment, medical implants and biological studies, and for technologies that include human-machine interfaces, soft robotics and augmented reality. Rendering such electronics soft and stretchable-like human skin-would make them more comfortable to wear, and, through increased contact area, would greatly enhance the fidelity of signals acquired from the skin. Structural engineering of rigid inorganic and organic devices has enabled circuit-level stretchability, but this requires sophisticated fabrication techniques and usually suffers from reduced densities of devices within an array. We reasoned that the desired parameters, such as higher mechanical deformability and robustness, improved skin compatibility and higher device density, could be provided by using intrinsically stretchable polymer materials instead. However, the production of intrinsically stretchable materials and devices is still largely in its infancy such materials have been reported, but functional, intrinsically stretchable electronics have yet to be demonstrated owing to the lack of a scalable fabrication technology. Here we describe a fabrication process that enables high yield and uniformity from a variety of intrinsically stretchable electronic polymers. We demonstrate an intrinsically stretchable polymer transistor array with an unprecedented device density of 347 transistors per square centimetre. The transistors have an average charge-carrier mobility comparable to that of amorphous silicon, varying only slightly (within one order of magnitude) when subjected to 100 per cent strain for 1,000 cycles, without current-voltage hysteresis. Our transistor arrays thus constitute intrinsically stretchable skin electronics, and include an active matrix for sensory arrays, as well as analogue and digital circuit elements. Our process offers a general platform for incorporating other intrinsically stretchable polymer materials, enabling the fabrication of next-generation stretchable skin electronic devices.
Assuntos

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Pele / Transistores Eletrônicos / Maleabilidade / Eletrônica / Dispositivos Eletrônicos Vestíveis Limite: Humans Idioma: En Revista: Nature Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Base de dados: MEDLINE Assunto principal: Pele / Transistores Eletrônicos / Maleabilidade / Eletrônica / Dispositivos Eletrônicos Vestíveis Limite: Humans Idioma: En Revista: Nature Ano de publicação: 2018 Tipo de documento: Article País de afiliação: Estados Unidos