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Symmorphic Intersecting Nodal Rings in Semiconducting Layers.
Gong, Cheng; Xie, Yuee; Chen, Yuanping; Kim, Heung-Sik; Vanderbilt, David.
Afiliação
  • Gong C; School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China.
  • Xie Y; School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China.
  • Chen Y; School of Physics and Optoelectronics, Xiangtan University, Xiangtan 411105, Hunan, China.
  • Kim HS; Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA.
  • Vanderbilt D; Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA.
Phys Rev Lett ; 120(10): 106403, 2018 Mar 09.
Article em En | MEDLINE | ID: mdl-29570330
ABSTRACT
The unique properties of topological semimetals have strongly driven efforts to seek for new topological phases and related materials. Here, we identify a critical condition for the existence of intersecting nodal rings (INRs) in symmorphic crystals, and further classify all possible kinds of INRs which can be obtained in the layered semiconductors with Amm2 and Cmmm space group symmetries. Several honeycomb structures are suggested to be topological INR semimetals, including layered and "hidden" layered structures. Transitions between the three types of INRs, named as α, ß, and γ type, can be driven by external strains in these structures. The resulting surface states and Landau-level structures, more complicated than those resulting from a simple nodal loop, are also discussed.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China