Steep-Slope WSe2 Negative Capacitance Field-Effect Transistor.
Nano Lett
; 18(6): 3682-3687, 2018 06 13.
Article
em En
| MEDLINE
| ID: mdl-29733598
ABSTRACT
P-type two-dimensional steep-slope negative capacitance field-effect transistors are demonstrated for the first time with WSe2 as channel material and ferroelectric hafnium zirconium oxide in gate dielectric stack. F4-TCNQ is used as p-type dopant to suppress electron leakage current and to reduce Schottky barrier width for holes. WSe2 negative capacitance field-effect transistors with and without internal metal gate structures and the internal field-effect transistors are compared and studied. Significant SS reduction is observed in WSe2 negative capacitance field-effect transistors by inserting the ferroelectric hafnium zirconium oxide layer, suggesting the existence of internal amplification (â¼10) due to the negative capacitance effect. Subthreshold slope less than 60 mV/dec (as low as 14.4 mV/dec) at room temperature is obtained for both forward and reverse gate voltage sweeps. Negative differential resistance is observed at room temperature on WSe2 negative capacitance field-effect-transistors as the result of negative capacitance induced negative drain-induced-barrier-lowering effect.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2018
Tipo de documento:
Article
País de afiliação:
Estados Unidos