Breakdown-induced conductive channel for III-nitride light-emitting devices.

Han, Sang-Hyun; Baek, Seung-Hye; Lee, Hyun-Jin; Kim, Hyunsoo; Lee, Sung-Nam.

Afiliação

Han SH; Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Republic of Korea.
Baek SH; Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Republic of Korea.
Lee HJ; Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Republic of Korea.
Kim H; School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Republic of Korea.
Lee SN; Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Republic of Korea. snlee@kpu.ac.kr.

Sci Rep ; 8(1): 16547, 2018 Nov 08.

Article em En | MEDLINE | ID: mdl-30410097

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2018 Tipo de documento: Article