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Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature.
Zhang, Guoqiang; Takiguchi, Masato; Tateno, Kouta; Tawara, Takehiko; Notomi, Masaya; Gotoh, Hideki.
Afiliação
  • Zhang G; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • Takiguchi M; NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • Tateno K; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • Tawara T; NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • Notomi M; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
  • Gotoh H; NTT Nanophotonics Center, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan.
Sci Adv ; 5(2): eaat8896, 2019 Feb.
Article em En | MEDLINE | ID: mdl-30801006
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Japão
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Japão