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Quantum Enhancement of Charge Density Wave in NbS2 in the Two-Dimensional Limit.
Bianco, Raffaello; Errea, Ion; Monacelli, Lorenzo; Calandra, Matteo; Mauri, Francesco.
Afiliação
  • Bianco R; Department of Applied Physics and Materials Science , California Institute of Technology , Pasadena , California 91125 , United States.
  • Errea I; Graphene Laboratories , Fondazione Istituto Italiano di Tecnologia , Via Morego , I-16163 Genova , Italy.
  • Monacelli L; Dipartimento di Fisica , Università di Roma La Sapienza , Piazzale Aldo Moro 5 , I-00185 Roma , Italy.
  • Calandra M; Fisika Aplikatua 1 Saila, Gipuzkoako Ingeniaritza Eskola , University of the Basque Country (UPV/EHU) , Europa Plaza 1 , 20018 Donostia-San Sebastián , Basque Country, Spain.
  • Mauri F; Centro de Física de Materiales (CSIC-UPV/EHU) , Manuel de Lardizabal pasealekua 5 , 20018 Donostia-San Sebastián , Basque Country, Spain.
Nano Lett ; 19(5): 3098-3103, 2019 05 08.
Article em En | MEDLINE | ID: mdl-30932501
ABSTRACT
At ambient pressure, bulk 2H-NbS2 displays no charge density wave instability, which is at odds with the isostructural and isoelectronic compounds 2H-NbSe2, 2H-TaS2, and 2H-TaSe2, and in disagreement with harmonic calculations. Contradictory experimental results have been reported in supported single layers, as 1H-NbS2 on Au(111) does not display a charge density wave, whereas 1H-NbS2 on 6H-SiC(0001) endures a 3 × 3 reconstruction. Here, by carrying out quantum anharmonic calculations from first-principles, we evaluate the temperature dependence of phonon spectra in NbS2 bulk and single layer as a function of pressure/strain. For bulk 2H-NbS2, we find excellent agreement with inelastic X-ray spectra and demonstrate the removal of charge ordering due to anharmonicity. In the two-dimensional limit, we find an enhanced tendency toward charge density wave order. Freestanding 1H-NbS2 undergoes a 3 × 3 reconstruction, in agreement with data on 6H-SiC(0001) supported samples. Moreover, as strains smaller than 0.5% in the lattice parameter are enough to completely remove the 3 × 3 superstructure, deposition of 1H-NbS2 on flexible substrates or a small charge transfer via field-effect could lead to devices with dynamical switching on/off of charge order.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Estados Unidos