Parylene Based Memristive Devices with Multilevel Resistive Switching for Neuromorphic Applications.

Minnekhanov, Anton A; Emelyanov, Andrey V; Lapkin, Dmitry A; Nikiruy, Kristina E; Shvetsov, Boris S; Nesmelov, Alexander A; Rylkov, Vladimir V; Demin, Vyacheslav A; Erokhin, Victor V

Minnekhanov, Anton A; Emelyanov, Andrey V; Lapkin, Dmitry A; Nikiruy, Kristina E; Shvetsov, Boris S; Nesmelov, Alexander A; Rylkov, Vladimir V; Demin, Vyacheslav A; Erokhin, Victor V.

Afiliação

Minnekhanov AA; National Research Centre "Kurchatov Institute", 123182, Moscow, Russia.
Emelyanov AV; National Research Centre "Kurchatov Institute", 123182, Moscow, Russia.
Lapkin DA; Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Moscow Region, Russia.
Nikiruy KE; National Research Centre "Kurchatov Institute", 123182, Moscow, Russia.
Shvetsov BS; Deutsches Elektronen-Synchrotron DESY, 22607, Hamburg, Germany.
Nesmelov AA; National Research Centre "Kurchatov Institute", 123182, Moscow, Russia.
Rylkov VV; Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Moscow Region, Russia.
Demin VA; Lomonosov Moscow State University, 119991, Moscow, Russia.
Erokhin VV; National Research Centre "Kurchatov Institute", 123182, Moscow, Russia.

Sci Rep ; 9(1): 10800, 2019 07 25.

Article em En | MEDLINE | ID: mdl-31346245

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Federação Russa

Texto completo

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2019 Tipo de documento: Article País de afiliação: Federação Russa