Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor.

Lee, Han Ju; Lee, Seonjeong; Ji, Yena; Cho, Kyung Gook; Choi, Kyoung Soon; Jeon, Cheolho; Lee, Keun Hyung; Hong, Kihyon

Lee, Han Ju; Lee, Seonjeong; Ji, Yena; Cho, Kyung Gook; Choi, Kyoung Soon; Jeon, Cheolho; Lee, Keun Hyung; Hong, Kihyon.

Afiliação

Lee HJ; Department of Materials Science and Engineering , Chungnam National University (CNU) , Daejeon 34134 , Republic of Korea.
Lee S; Department of Materials Science and Engineering , Chungnam National University (CNU) , Daejeon 34134 , Republic of Korea.
Ji Y; Department of Materials Science and Engineering , Chungnam National University (CNU) , Daejeon 34134 , Republic of Korea.
Cho KG; Department of Chemistry and Chemical Engineering , Inha University , Incheon 402-751 , Republic of Korea.
Lee KH; Department of Chemistry and Chemical Engineering , Inha University , Incheon 402-751 , Republic of Korea.
Hong K; Department of Materials Science and Engineering , Chungnam National University (CNU) , Daejeon 34134 , Republic of Korea.

ACS Appl Mater Interfaces ; 11(43): 40243-40251, 2019 Oct 30.

Article em En | MEDLINE | ID: mdl-31592635

Palavras-chave

3D channel; electrolyte-gated transistors; inorganic p-channel transistor; ion doping; metal halide semiconductor; ultrahigh mobility

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2019 Tipo de documento: Article

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google