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Frustration and Atomic Ordering in a Monolayer Semiconductor Alloy.
Azizi, Amin; Dogan, Mehmet; Cain, Jeffrey D; Eskandari, Rahmatollah; Yu, Xuanze; Glazer, Emily C; Cohen, Marvin L; Zettl, Alex.
Afiliação
  • Azizi A; Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
  • Dogan M; Kavli Energy NanoScience Institute at the University of California, Berkeley, Berkeley, California 94720, USA.
  • Cain JD; Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
  • Eskandari R; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
  • Yu X; Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
  • Glazer EC; Kavli Energy NanoScience Institute at the University of California, Berkeley, Berkeley, California 94720, USA.
  • Cohen ML; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
  • Zettl A; Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA.
Phys Rev Lett ; 124(9): 096101, 2020 Mar 06.
Article em En | MEDLINE | ID: mdl-32202855
Frustrated interactions can lead to short-range ordering arising from incompatible interactions of fundamental physical quantities with the underlying lattice. The simplest example is the triangular lattice of spins with antiferromagnetic interactions, where the nearest-neighbor spin-spin interactions cannot simultaneously be energy minimized. Here we show that engineering frustrated interactions is a possible route for controlling structural and electronic phenomena in semiconductor alloys. Using aberration-corrected scanning transmission electron microscopy in conjunction with density functional theory calculations, we demonstrate atomic ordering in a two-dimensional semiconductor alloy as a result of the competition between geometrical constraints and nearest-neighbor interactions. Statistical analyses uncover the presence of short-range ordering in the lattice. In addition, we show how the induced ordering can be used as another degree of freedom to considerably modify the band gap of monolayer semiconductor alloys.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos