Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga<sub>2</sub>O<sub>3</sub>.

Islam, Md Minhazul; Liedke, Maciej Oskar; Winarski, David; Butterling, Maik; Wagner, Andreas; Hosemann, Peter; Wang, Yongqiang; Uberuaga, Blas; Selim, Farida A

Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga₂O₃.

Islam, Md Minhazul; Liedke, Maciej Oskar; Winarski, David; Butterling, Maik; Wagner, Andreas; Hosemann, Peter; Wang, Yongqiang; Uberuaga, Blas; Selim, Farida A.

Afiliação

Islam MM; Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio, 43403, USA.
Liedke MO; Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio, 43403, USA.
Winarski D; Institute of Radiation Physics, Helmholtz-Center Dresden-Rossendorf, Dresden, 01328, Germany.
Butterling M; Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio, 43403, USA.
Wagner A; Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio, 43403, USA.
Hosemann P; Institute of Radiation Physics, Helmholtz-Center Dresden-Rossendorf, Dresden, 01328, Germany.
Wang Y; Institute of Radiation Physics, Helmholtz-Center Dresden-Rossendorf, Dresden, 01328, Germany.
Uberuaga B; Department of Nuclear Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA.
Selim FA; Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico, 87545, USA.

Sci Rep ; 10(1): 6134, 2020 Apr 09.

Article em En | MEDLINE | ID: mdl-32273592

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Sci Rep Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

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