Mechanism of Thermal Atomic Layer Etch of W Metal Using Sequential Oxidation and Chlorination: A First-Principles Study.

Kondati Natarajan, Suresh; Nolan, Michael; Theofanis, Patrick; Mokhtarzadeh, Charles; Clendenning, Scott B

Kondati Natarajan, Suresh; Nolan, Michael; Theofanis, Patrick; Mokhtarzadeh, Charles; Clendenning, Scott B.

Afiliação

Kondati Natarajan S; University College Cork, Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland.
Nolan M; Department of Electrical Engineering and Automation, Aalto University, Espoo 02150, Finland.
Theofanis P; University College Cork, Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP, Ireland.
Mokhtarzadeh C; Nanotechnology and Integrated Bioengineering Centre, Ulster University, Shore Road, Co Antrim BT37 OQB, Northern Ireland.
Clendenning SB; Intel Corporation, 2501 NE Century Blvd., Hillsboro, Oregon 97124, United States.

ACS Appl Mater Interfaces ; 12(32): 36670-36680, 2020 Aug 12.

Article em En | MEDLINE | ID: mdl-32666796

Palavras-chave

atomic layer etching; atomistic simulations; density functional theory; first principles; self-limiting reaction; transistor contacts

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Texto completo: 1 Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Irlanda

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