Comparison between Graphene and GaAs Quantized Hall Devices with a Dual Probe.

Payagala, Shamith U; Rigosi, Albert F; Panna, Alireza R; Pollarolo, Alessio; Kruskopf, Mattias; Schlamminger, Stephan; Jarrett, Dean G; Brown, Ryan; Elmquist, Randolph E; Brown, Duane; Newell, David B

Payagala, Shamith U; Rigosi, Albert F; Panna, Alireza R; Pollarolo, Alessio; Kruskopf, Mattias; Schlamminger, Stephan; Jarrett, Dean G; Brown, Ryan; Elmquist, Randolph E; Brown, Duane; Newell, David B.

Afiliação

Payagala SU; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Rigosi AF; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Panna AR; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Pollarolo A; Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada.
Kruskopf M; Physikalisch-Technische Bundesanstalt, Braunschweig 38116, Germany.
Schlamminger S; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Jarrett DG; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Brown R; Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada.
Elmquist RE; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.
Brown D; Measurements International, Ltd., Prescott, Ontario, K0E 1T0, Canada.
Newell DB; National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

IEEE Trans Instrum Meas ; 69: 9374-9380, 2020.

Article em En | MEDLINE | ID: mdl-33335334

Palavras-chave

carrier density; cryogenic current comparator; dual probe assembly; epitaxial graphene; quantized Hall resistance

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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: IEEE Trans Instrum Meas Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Estados Unidos

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