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Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects.
Yang, Wenda; Tian, Guo; Zhang, Yang; Xue, Fei; Zheng, Dongfeng; Zhang, Luyong; Wang, Yadong; Chen, Chao; Fan, Zhen; Hou, Zhipeng; Chen, Deyang; Gao, Jinwei; Zeng, Min; Qin, Minghui; Chen, Long-Qing; Gao, Xingsen; Liu, Jun-Ming.
Afiliação
  • Yang W; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Tian G; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Zhang Y; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Xue F; Laboratory of Solid-State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
  • Zheng D; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Zhang L; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Wang Y; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Chen C; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Fan Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Hou Z; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Chen D; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Gao J; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Zeng M; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Qin M; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Chen LQ; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China.
  • Gao X; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Liu JM; Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, China. xingsengao@scnu.edu.cn.
Nat Commun ; 12(1): 1306, 2021 Feb 26.
Article em En | MEDLINE | ID: mdl-33637763
ABSTRACT
Ferroelectric topological objects provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels associated with the topological cores of quadrant vortex domain and center domain (monopole-like) states confined in high quality BiFeO3 nanoislands, abbreviated as the vortex core and the center core. We unveil via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nat Commun Assunto da revista: BIOLOGIA / CIENCIA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China