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Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography.
Kirste, Lutz; Grabianska, Karolina; Kucharski, Robert; Sochacki, Tomasz; Lucznik, Boleslaw; Bockowski, Michal.
Afiliação
  • Kirste L; Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastraße 72, 79108 Freiburg, Germany.
  • Grabianska K; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
  • Kucharski R; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
  • Sochacki T; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
  • Lucznik B; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
  • Bockowski M; Institute of High-Pressure Physics of the Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Materials (Basel) ; 14(19)2021 Sep 22.
Article em En | MEDLINE | ID: mdl-34639870
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Alemanha
Texto completo
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XML
PubMed Links
Buscar no Google

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Alemanha